Kelvin probe force microscope synchronously measuring multiple parameters

A Kelvin probe force and synchronous measurement technology, applied in scanning probe microscopy, measuring devices, scanning probe technology, etc. Synchronous characterization and other issues to achieve high practical value, high availability and operability, and the effect of compensating errors

Active Publication Date: 2017-05-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing methods can realize the characterization of the surface morphology, mechanical properties and surface local potential of the sample, they cannot realize the simultaneous characterization of these parameters, that is to say, the surface morphology, mechanical properties and local surface potential of the sample cannot be simultaneously obtained through one scan. electric potential

Method used

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  • Kelvin probe force microscope synchronously measuring multiple parameters
  • Kelvin probe force microscope synchronously measuring multiple parameters
  • Kelvin probe force microscope synchronously measuring multiple parameters

Examples

Experimental program
Comparison scheme
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specific Embodiment approach 1

[0020] Specific implementation mode one: combine figure 1 Describe this embodiment mode, a Kelvin probe force microscope for multi-parameter synchronous measurement described in this embodiment mode, including XY micron positioning stage 12, XYZ nanometer positioning stage 13, Kelvin scanning sample stage 15, XYZ micron positioning stage 8, a Dimension range adjustment micro-platform 10, probe hand bracket 9, probe hand 7, host computer, DC power supply, arbitrary wave generator, acquisition card, signal generator, phase shifter, lock-in amplifier, four-quadrant position detector , semiconductor laser generator, piezoelectric controller No. 1, piezoelectric controller No. 2 and piezoelectric controller No. 3;

[0021] The Kelvin scanning sample stage 15 is fixed on the XYZ nanopositioning stage 13, and the XYZ nanopositioning stage 13 is fixed on the XY micron positioning stage 12; the probe hand 7 is equipped with a conductive probe 7-4 and can drive the conductive probe 7-4 ...

specific Embodiment approach 2

[0054] Specific implementation mode two: combination figure 1 with figure 2 Describe this embodiment. This embodiment is a further limitation of the Kelvin probe force microscope described in Embodiment 1. In this embodiment, a measurement module implemented by software is embedded in the host computer, and the measurement module includes the following units :

[0055] Force detection unit: collect the deformation of the conductive probe 7-4 detected by the four-quadrant position detector 4 in real time, and calculate the force between the conductive probe 7-4 and the sample according to the deformation; the force is equal to The product of the deformation amount and the stiffness of the conductive probe 7-4;

[0056] Surface topography and maximum indentation depth measurement unit: Control the Kelvin scanning sample stage 15 to rise through the No. 1 piezoelectric controller, so that the sample is close to the conductive probe 7-4, when the maximum interaction between the...

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Abstract

The invention discloses a Kelvin probe force microscope synchronously measuring multiple parameters and relates to a Kelvin probe force microscope. The invention aims to solve the problem that surface appearance, mechanical property and surface local potential of a sample cannot be synchronously represented by using a conventional Kelvin probe force microscope. In the invention, a direct current power supply is used for generating a direct current signal and loads the same between a conductive probe and the sample, a signal generator generates three-path same signals, the frequency of which is the same as a second order resonant frequency of the conductive probe, and the first-path signal is overlaid with a signal generated by an arbitrary waveform generator for controlling a #3 piezoelectric controller, so that the #3 piezoelectric controller drives a piezoelectric ceramic on a probe hand; the second-path signal as a reference signal is sent to a lock phase amplifier; the third-path signal which is shifted by 90 degrees by a phase shifter is loaded between the conductive probe and the sample; and a signal output by the lock phase amplifier is sent to an upper computer. The Kelvin probe force microscope disclosed by the invention is suitable for measuring the surface appearance, the mechanical properties and the surface local potential of the sample.

Description

technical field [0001] The present invention relates to Kelvin probe force microscopy. Background technique [0002] Kelvin Probe Force Microscopy (KPFM) is a member of the Scanning Probe Microscopy (SPM) family, which combines Kelvin probe technology with Atomic force microscopy (AFM) to achieve Characterization of the local potential on the sample surface. The traditional Kelvin probe force microscope can realize the characterization of the surface morphology, mechanical properties and surface local potential of the sample through different measurement methods. For example, the "lift-up mode" can obtain the surface topography and local potential of the sample through two scans, and the "resonance mode (tapping mode)" can obtain the surface topography and local potential of the sample at the same time through one scan. The "peak force mode" is an intermittent contact mode. When scanning, two scans are performed per line. The first scan obtains the surface morphology and m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01Q60/30
CPCG01Q60/30
Inventor 谢晖张号孟祥和宋健民
Owner HARBIN INST OF TECH
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