This invention discloses a method for fabricating an embedded
wafer-type self-traceable
grating standard sheet, belonging to the field of
semiconductor manufacturing and
metrology standards technology. The method includes: using a single-sided polished
silicon wafer as a substrate material to obtain a first structure; performing an oxidation treatment on the first structure to form an
oxide layer, obtaining a second structure; performing
photolithography on the second structure and
etching to remove the exposed
oxide layer, forming a
hard mask for
etching grooves, and forming tracking mark patterns around the grooves, obtaining a third structure; performing
photolithography on the third structure to etch grooves on the
silicon wafer, obtaining a fourth structure; and
coating the bottom of the self-traceable
grating and inside the grooves with an
adhesive to precisely
mount the self-traceable
grating within the grooves, obtaining an embedded wafer-type self-traceable grating standard sheet. This invention, using the above method, can provide a precise measurement benchmark across the entire wafer, improve measurement consistency, reduce manual calibration errors, and optimize the
photolithography alignment and wafer geometry measurement process.