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Direct Millimeter-Wave Signal Detector Based on Silicon-Based Slit-Coupled T-Junction

A signal detector, coupled technology, applied in instruments, measuring devices, measuring electrical variables, etc., can solve the problems of millimeter wave signal detection technology that cannot be effectively improved and developed, the integration is not very high, and the structure is complex. To achieve the effect of simple and novel structure, improved efficiency and high application value

Active Publication Date: 2019-03-05
SOUTHEAST UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The 21st century is the era of information science and technology. In this era, signal detection technology is a technology that people have been paying attention to and researching, especially in today's military, communication, and aerospace fields. Signal detection is a very important task. A signal has three very important parameters: frequency, phase and power. According to frequency, it can be divided into low frequency signal, high frequency signal and extremely high frequency signal. Among them, millimeter wave signal It is an extremely high-frequency signal, which is located in the overlapping area of ​​microwave and far-infrared waves. At present, the detection technology for low-frequency signals and high-frequency signals has been increasingly perfected, but the detection technology for extremely high-frequency millimeter-wave signals still exists. Due to many problems, most of today's signal detectors can only measure the frequency, phase and power of the signal separately, the integration level is not very high, and their structures are relatively complex, with many high-frequency effects, affected by these problems Influenced by the influence, the detection technology of millimeter wave signal has not been effectively perfected and developed.

Method used

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  • Direct Millimeter-Wave Signal Detector Based on Silicon-Based Slit-Coupled T-Junction
  • Direct Millimeter-Wave Signal Detector Based on Silicon-Based Slit-Coupled T-Junction
  • Direct Millimeter-Wave Signal Detector Based on Silicon-Based Slit-Coupled T-Junction

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Embodiment Construction

[0023] specific implementation plan

[0024]The silicon-based slot-coupled T-junction direct millimeter-wave signal detector of the present invention is fabricated on a high-resistance Si substrate 7, and consists of a coplanar waveguide transmission line 4 and a No. 1 slot coupling structure 5-1. , No. 2 slot coupling structure 5-2, No. 3 slot coupling structure 5-3, No. 4 slot coupling structure 5-4, phase shifter 6, No. 1 SPDT switch 22, No. 2 SPDT switch 23, one It is composed of T-junction power splitter, three T-junction power combiners and six direct thermoelectric power sensors.

[0025] SPDT switch 22 is composed of coplanar waveguide transmission line 4, anchor region 25, Si 3 N 4 Composed of a dielectric layer 19, a switch pull-down electrode plate 26 and a switch beam 24, the coplanar waveguide transmission line 4 is connected to the anchor area 25, and the anchor area 25 is connected to the switch beam 24 on two different branches, one of which is connected dire...

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Abstract

The invention relates to a direct type millimeter wave signal detector for a silicon-based gap coupling type T-shaped knot. The direct type millimeter wave signal detector is composed of a coplanar waveguide transmission line, a gap coupling structure, a phase shifter, a single-pole double-throw switch, a T-shaped knot power divider, a T-shaped knot power combiner and a direct type thermoelectric power sensor, wherein the structure is manufactured on a high-resistance Si substrate; four gap coupling structures are arranged on the structure; the two gap coupling structures on the upper side can realize the frequency measurement for the signal; the two gap coupling structures on the lower side can realize the phase measurement for the signal; one phase shifter is arranged between front and rear gaps; the T-shaped knot power divider and the T-shaped knot power combiner are mainly composed of the coplanar waveguide transmission line, a fan-shaped defect structure and an air bridge; the direct type thermoelectric power sensor is composed of the coplanar waveguide transmission line, a thermocouple and a bridging capacitor; the thermocouple is composed of a metal arm and a semi-conductive arm which are serially connected with each other; the thermocouple can automatically heat and complete the thermoelectric conversion. The frequency, phase and power detection are integrated through the structures, so that the efficiency of the signal detector is greatly increased.

Description

technical field [0001] The invention provides a silicon-based gap-coupled T-junction direct millimeter-wave signal detector, which belongs to the technical field of micro-electro-mechanical systems (MEMS). Background technique [0002] The 21st century is the era of information science and technology. In this era, signal detection technology is a technology that people have been paying attention to and researching, especially in today's military, communication, and aerospace fields. Signal detection is a very important task. A signal has three very important parameters: frequency, phase and power. According to frequency, it can be divided into low frequency signal, high frequency signal and extremely high frequency signal. Among them, millimeter wave signal It is an extremely high-frequency signal, which is located in the overlapping area of ​​microwave and far-infrared waves. At present, the detection technology for low-frequency signals and high-frequency signals has been ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R21/02G01R23/02G01R25/00G01R15/00
CPCG01R15/00G01R21/02G01R23/02G01R25/00
Inventor 廖小平褚晨蕾
Owner SOUTHEAST UNIV
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