A kind of thin film resistor inner layer etching method

Abstract

The present invention provides a thin film resistor inner layer etching method. The method includes the steps of rough shape cutting, inner layer film applying, inner layer exposure, inner layer etching 1, inner layer etching 2, inner layer AOI (Automatic Optic Inspection) and post treatment. According to the step of inner layer etching, it only needs to tear off a protection film of a surface provided with a resistor. According to the step of inner layer etching 2, a protection film of a surface with no resistor is torn off. According to the method provided by the technical schemes of the invention, the two steps of etching are both performed on the same etching line, and the different regions are protected by using the protection films during etching, and therefore, the first step of etching is only performed on the surface with the resistor, and the second step of etching is performed on two surfaces of a circuit board. With the etching method adopted, a process flow is optimized, equipment input and raw material input are decreased, production costs are effectively reduced, and production efficiency is improved.

Description

technical field [0001] The invention relates to a preparation process of a multilayer circuit board, in particular to an etching method for an inner layer of a thin film resistor. Background technique [0002] The existing thin-film resistor inner layer etching production process is: material cutting → inner layer film bonding → inner layer exposure → inner layer etching 1 → inner layer etching 2 → inner layer AOI, and when performing inner layer etching 2 process, a separate Open an etching line, the specific process is: liquid preparation (copper sulfate)→opening the cylinder→heating→inner layer etching 2 (soaking). During the production process of the existing buried resistor products, additional Dosing liquid, opening tanks, and adding some processes make the process more complicated, and need to increase the cost of equipment and potions, which greatly affects production efficiency. Contents of the invention [0003] In order to solve the above-mentioned technical pr...

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Problems solved by technology

[0002] The existing production process of inner layer etching of thin film resistors is: material cutting → inner layer filming → inner layer exposure → inner layer etching 1 → inner layer etching 2 → inner layer AOI. To open an etching line, the specific process is: liquid preparation (copper sulfate)→opening the cylinder→heating→inner layer etching 2 (soaking). During the production process of the existing buried resistor products, additional Dosing liquid, opening tanks, and adding some processes, making the process more complicated, and increasing the cost of equipment and potions, greatly affecting production efficiency

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