Reliability test structure of semiconductor device and test method thereof

Abstract

A reliability test structure of a semiconductor device and a test method thereof are disclosed. The structure comprises a first metal structure, a second metal structure, a first conductive plug, a second conductive plug, a third conductive plug and a metal wire, wherein the first conductive plug and the second conductive plug are connected to the first metal structure; the third conductive plug is connected to the second metal structure; and the metal wire stretches across the first metal structure and the second metal structure and is connected to the first conductive plug, the second conductive plug and the third conductive plug. The first metal structure, the first conductive plug, the second conductive plug and the metal wire form a metal interconnection line electromigration test structure. The second metal structure, the third conductive plug and the metal wire form a metal interconnection line stress migration test structure. In the invention, the metal interconnection line electromigration test structure and the metal interconnection line stress migration test structure are integrated into one test structure so that failure time of interaction between electromigration and a metal interconnection line and between stress migration and the metal interconnection line can be assessed, and then reliability test efficiency of the semiconductor device can be increased.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a reliability testing structure and a testing method of a semiconductor device. Background technique [0002] With the development of integrated circuit technology, the feature size of integrated circuits is continuously reduced. In order to ensure the reliability of semiconductor devices, the manufacturing process of semiconductor devices puts forward higher requirements for the metal interconnection wires that realize the electrical connection between devices. [0003] In semiconductor manufacturing, metal electromigration failure (Electron-Migration, EM) and metal stress migration failure (Stress-Migration, SM) are the main factors affecting the reliability performance of semiconductor devices. [0004] Wherein, the metal electromigration failure refers to: when the device is working, a certain current passes through the metal interconnection and generates an electric field. Unde...

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Problems solved by technology

[0007] However, the test efficiency of the reliability test structure of the prior art semiconductor device is low

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