Manufacturing method of double-layer grid structure of oled display device
A grid structure and display device technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large alignment deviation and high production cost, and achieve the effect of low production cost and simple operation
Active Publication Date: 2019-10-18
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
In order to avoid a large alignment deviation between the first grid and the second grid, it is generally necessary to design the size of the second grid to be larger than the size of the first grid, which requires the use of two different masks to form The first gate and the second gate have higher manufacturing costs
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[0038] In order to further illustrate the technical means adopted by the present invention and its effects, a detailed description is given below in conjunction with the preferred embodiments of the present invention and the accompanying drawings.
[0039] see figure 1 , the present invention provides a method for fabricating a double-layer gate structure of an OLED display device, comprising the following steps:
[0040] Step 1. Provide a substrate 100, and deposit a metal material on the substrate 100 to form a first metal layer 200'.
[0041] Specifically, the substrate 100 is a glass substrate or a flexible substrate.
[0042] Specifically, in the step 1, a metal material is deposited on the substrate 100 by a physical vapor deposition (Physical Vapor Deposition, PVD) method to form the first metal layer 200'.
[0043] Step 2, providing a halftone mask 900;
[0044] The halftone mask 900 includes a first exposure area 910 , a second exposure area 920 located outside the...
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The present invention provides a method for manufacturing a double-layer gate structure of an OLED display device, which includes a first exposure area, a second exposure area located outside the first exposure area and adjacent to it, and the remaining third exposure area A half-tone mask, using the half-tone mask to form a first photoresist pattern including first and second photoresist regions respectively corresponding to the first and second exposure regions on the first metal layer, and the second The thickness of a photoresist pattern in the first photoresist area is greater than the thickness in the second photoresist area, then remove the first photoresist pattern in the second photoresist area, and use the remaining first photoresist pattern as a shield to etch the first metal layer to form the first gate, and in the subsequent process, a second photoresist pattern located above the first gate and having the same size as the first photoresist pattern is formed on the second metal layer through the same half-tone mask, and The second photoresist pattern is used to shield and etch the second metal layer to form the second grid above the first grid, which is simple in operation and low in production cost.
Description
technical field [0001] The present invention relates to the field of display technology, and in particular, to a method for fabricating a double-layer gate structure of an OLED display device. Background technique [0002] Organic Light-Emitting Diode (OLED) display, also known as organic electroluminescent display, is an emerging flat panel display device, due to its simple preparation process, low cost, low power consumption, high luminous brightness, It has a wide range of working temperature adaptation, light and thin volume, fast response speed, easy to achieve color display and large-screen display, easy to achieve matching with integrated circuit drivers, easy to achieve flexible display and other advantages, so it has broad application prospects. [0003] OLED can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED) according to the driving method, namely direct addressing and thin film transistor (Thin...
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IPC IPC(8): H01L21/77H01L27/12H01L27/32
CPCH01L27/1259H01L27/1288H10K59/1213
Inventor 赵瑜
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD