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Three-dimensional memory element and its manufacturing method

A technology of a memory element and a manufacturing method, which is applied in the field of high-density memory devices and can solve problems such as difficulty in controlling multi-bit operations

Active Publication Date: 2020-03-17
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the change between the current and the voltage (I / V) of the bipolar junction transistor or diode exhibits an exponential function relationship, it is not easy to control for multi-bit operation (multi-bitoperation)

Method used

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  • Three-dimensional memory element and its manufacturing method
  • Three-dimensional memory element and its manufacturing method
  • Three-dimensional memory element and its manufacturing method

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Embodiment Construction

[0160] The present invention provides a three-dimensional memory element and a manufacturing method thereof, which can solve the problems that the existing lateral channel field effect transistors limit the density of the memory cell array and the bipolar junction transistors or diodes are difficult to operate and control. In order to make the above-mentioned embodiments and other objects, features and advantages of the present invention more clearly understood, a number of three-dimensional memory devices and fabrication methods thereof are listed below as preferred embodiments and described in detail with the accompanying drawings.

[0161] However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The present invention may still be practiced with other features, elements, methods and parameters. The preferred embodiments are provided only to illustrate the technical features of the present invention, and n...

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Abstract

The invention provides a three -dimensional memory element and its manufacturing method.This three -dimensional storage element includes: semiconductor substrate, source pole line, grid line, and multiple storage storage units.Semiconductor substrates have a protruding part.The source line is located in the semiconductor substrate and extends below the protruding part.The grid line is surrounded and covered on the protruding part, and is isolated from the protruding part and the source of the source.Multiple storage storage units are located above the base material and connect with the top of the protruding part.

Description

technical field [0001] The present invention relates to a high-density memory device and a manufacturing method thereof. In particular, it relates to a memory device having a three-dimensional (3D) three-dimensional memory array structure and a manufacturing method thereof. Background technique [0002] With the development of electronic technology, semiconductor memory elements have been widely used in electronic products, such as MP3 players, digital cameras, notebook computers, mobile phones, etc. The current demand for memory elements is trending toward smaller sizes and larger storage capacities. In order to meet the requirements of such high device density, a variety of three-dimensional memory devices with different structural forms have been developed. [0003] A typical three-dimensional memory device includes a three-dimensional memory cell array formed by stacking a plurality of memory cell planes, and string select transistors electrically connected in series b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/105H01L29/78H01L21/8239H10B99/00
CPCH01L29/7827H10B99/00
Inventor 赖二琨蒋光浩李岱萤
Owner MACRONIX INT CO LTD