Differential mixed chemical vapor deposition device
A chemical vapor deposition, hybrid technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of not ensuring uniform gas dispersion, increasing the complexity of the device, and opening the gas flow channel, etc. The effect of improving the uniformity of gas distribution, simplifying equipment and improving the utilization rate of electric energy
Inactive Publication Date: 2017-05-31
BEIJING UNIV OF CHEM TECH
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Problems solved by technology
In this gas dispersion method, the reaction gas diffuses from the middle to the surroundings, and the gas flow channel is wide, which cannot ensure uniform gas dispersion, and this method requires the reaction gas to be pre-mixed before entering the vapor deposition device, which increases the complexity of the device. sex
In addition, for the reaction gas that is easy to react at room temperature, pre-mixing will easily cause the gas to react in advance, causing clogging and affecting the deposition effect
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[0022] A kind of differential mixing type chemical vapor deposition device of the present invention, such as figure 1 As shown, it is composed of a box body 4, a flow channel plate 7, an insulating sealing gasket 6, a reaction chamber 3, a pillar 1, a base 15, a heating system and a radio frequency system; the reaction chamber 3 is a reaction space for chemical vapor deposition The flow channel plate 7 is arranged above the reaction chamber 3, and the flow channel 10 in the flow channel plate 7 is composed of A inlet 8, B inlet 12, A main channel 17, B main channel 22, A sub-runner 18, B sub-runner 23, A Branch flow channel 19, B branch flow channel 24, converging flow channel 20, mixing flow channel 21 and nozzle 5 are composed; the electrode 11 of the radio frequency system is installed above the flow channel plate 7; the box body 4 is located below the flow channel plate 7, and it is connected with the flow channel The space surrounded by the plate 7 is the reaction space 3...
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The invention discloses a differential mixed chemical vapor deposition device. The device consists of a box body, a runner plate, an insulation sealing gasket, a reaction chamber, a support column, a base, a heating system and a radio-frequency system. The runner plate is provided with two gas inlets for respectively introducing two different reaction gases; the two gases are uniformly distributed in flowing field space under a differential shunting effect in flowing fields of the runner plates; and the two shunted gases can be respectively mixed for spraying by nozzles. The differential mixed runner can improve the gas mixing uniformity and the gas distribution uniformity, so that a chemical vapor deposition film is more uniform, a gas mixing device is saved, and the equipment is simplified; an electromagnetic induction heating mode is adopted to achieve fast heating speed, increment of the utilization rate of electric energy and reduction of the cost; and in addition, the chemical vapor deposition device can close one inlet and open the other inlet for introducing the mixed reaction gas to improve the gas distribution uniformity.
Description
technical field [0001] The invention belongs to the field of vapor deposition, in particular to a differential mixing chemical vapor deposition device. Background technique [0002] Vapor deposition methods used to form thin films on objects are generally classified into physical vapor deposition (PVD) methods (such as sputtering) and chemical vapor deposition (CVD) methods. In PVD methods, the physical characteristics of the deposition source and the thin film material In the CVD method, a chemical reaction is used to form a thin film in such a way that the physical properties of the deposition source and the physical properties of the thin film material are different. Since the uniformity of composition or thickness and step coverage of the PVD method is not as good as that of the CVD method, the CVD method is generally used more. [0003] CVD methods include atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD) and plasma ...
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IPC IPC(8): C23C16/455C23C16/505C23C16/46
CPCC23C16/45512C23C16/46C23C16/505
Inventor 杨卫民刘海超焦志伟丁玉梅
Owner BEIJING UNIV OF CHEM TECH