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Device and method capable of horizontally improving directional solidification purification yield of polycrystalline silicon

A technology of directional solidification and polysilicon, which is applied in chemical instruments and methods, polycrystalline material growth, crystal growth, etc., can solve the problems of lower product yield, low impurity removal rate, and easy reverse solidification in impurity regions, so as to improve The effect of utilization

Inactive Publication Date: 2017-05-31
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the traditional directional solidification technology solidifies from the bottom to the top, and the removal rate of impurities is low. The final solidified impurity area is prone to reverse solidification, which reduces the yield of the product.

Method used

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  • Device and method capable of horizontally improving directional solidification purification yield of polycrystalline silicon
  • Device and method capable of horizontally improving directional solidification purification yield of polycrystalline silicon

Examples

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Embodiment 1

[0024] Such as figure 1 with figure 2 As shown, a device for improving the directional solidification and purification rate of polysilicon laterally comprises a water-cooled column 1, an annular graphite crucible 2 is arranged on the outside of the side wall of the water-cooled column 1, the water-cooled column 1 and the annular graphite crucible 2 Axes are located on the same straight line, and the side wall outside of described annular graphite crucible 2 is provided with annular heating body 3, and the side wall outside of described annular heating body 3 is provided with annular heating body 4, and the bottom of described annular graphite crucible 2 is provided with The tray 5 is rotated, and the water cooling column 1 is provided with a circulation channel 6 .

[0025] The material of the water-cooling column 1 is copper, and the outer wall of the water-cooling column 1 is provided with a sheath 7, and the sheath 7 is a graphite sheath.

[0026] The annular heating ele...

Embodiment 2

[0030] A method of using the equipment described in embodiment 1 to laterally improve polysilicon directional solidification purification yield has the following steps:

[0031] S1. Place the silicon material in the annular graphite crucible 2, evacuate the reaction space to 0.1-3Pa and then pour in flowing argon to make the pressure in the reaction space 60000-120000Pa. The annular heating body 4 is heated at 10°C Heat the annular heating element 3 to 1550°C at a heating rate of 1 / min, and keep it warm for 0.5-1h to obtain a completely melted silicon melt 8;

[0032] S2. Cooling water is poured into the circulating channel 6, and the temperature of the annular heating element 3 uniformly decreases to 1450° C. within 20 minutes. After the polysilicon 9 begins to nucleate inside the annular graphite crucible 2, the The annular graphite crucible 2 rotates with the rotating tray 5 at a speed of 1-300r / min, and at the same time, the annular heating element 3 cools at a cooling rat...

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Abstract

The method discloses a device and method capable of horizontally improving the directional solidification purification yield of polycrystalline silicon. The device comprises a water-cooling column, a ring graphite crucible is arranged on the outer side of the side wall of the water-cooling column, the axis of the water-cooling column and the axis of the ring graphite crucible are located on the same straight line, a ring heating body is arranged on the outer side of the side wall of the ring graphite crucible, another ring heating body is arranged on the outer side of the side wall of the ring heating body, a rotary tray is arranged on the bottom of the ring graphite crucible, and a circular flow channel is formed in the water-cooling column. A horizontal solidification mode is adopted, the thickness of a solid liquid interface diffusion layer of the material is ensured to be reduced through centrifugal force, and the separation and solidification effect is improved.

Description

technical field [0001] The invention relates to a device and a method for laterally increasing the polysilicon directional solidification purification yield. Background technique [0002] Directional solidification purification is the main technology to remove metal impurities in polysilicon, and it is widely used in the process of polysilicon ingot casting and metallurgical purification. [0003] Directional solidification purification utilizes the segregation behavior of impurities at the solid-liquid interface: during the directional solidification process, due to the different solubility of impurity elements in the solid and liquid phases, the solute redistribution occurs at the solid-liquid interface of the silicon melt , the degree of redistribution is determined by the segregation coefficient and the solidification rate. The segregation coefficient k0<<1 of metal impurities will continuously enrich in liquid silicon, the impurity content in the initial solidifi...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B28/06
CPCC30B29/06C30B28/06
Inventor 李鹏廷任世强庄辛鹏谭毅姜大川李佳艳
Owner DALIAN UNIV OF TECH
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