QLED and preparation method thereof

A derivative and graphene technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor electro-optic conversion efficiency of blue QLEDs and affect the efficiency of full-color display QLED devices, so as to improve the performance of QLED devices and improve Photoelectric conversion efficiency, effect of improving hole transport and electron transport performance

Active Publication Date: 2017-05-31
TCL CORPORATION
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Problems solved by technology

[0003] The purpose of the present invention is to provide a QLED and a preparation method thereof, aiming to solve the problem that in the existing full-color display QLED, the efficiency of the full-color display QLED device is affected due to the poor electro-optic conversion efficiency of the blue QLED

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  • QLED and preparation method thereof
  • QLED and preparation method thereof

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[0013] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0014] combine figure 1 , figure 2 , an embodiment of the present invention provides a QLED, including a substrate 1, an anode 2, a graphene oxide layer 3, a quantum dot light-emitting layer 5, a graphene oxide derivative layer 7, and a cathode 8 that are sequentially stacked, such as figure 1 As shown, wherein, the graphene oxide derivative layer 7 is made of graphene oxide derivatives, and the graphene oxide derivatives are graphene oxide in which carboxyl protons in graphene oxide are partially or completely replaced by metal elements derivative.

[0015] Specifically, in the embodim...

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Abstract

The invention provides a QLED, which comprises a substrate, an anode, a graphene oxide layer, a quantum dot light-emitting layer, a graphene oxide derivative layer and a cathode which are sequentially stacked, wherein the graphene oxide derivative layer is prepared from a graphene oxide derivative; and the graphene oxide derivative is the graphene oxide derivative of which carboxyl protons in graphene oxide are partially or completely replaced with metal elements. The preparation method of the QLED comprises the following steps of (1) providing the substrate, depositing the anode on the substrate and depositing a graphene oxide water solution on the anode to form the graphene oxide layer; depositing the quantum dot light-emitting layer on the graphene oxide layer and depositing the graphene oxide derivative on the quantum dot light-emitting layer to form the graphene oxide derivative layer; and depositing the cathode on the graphene oxide derivative layer.

Description

technical field [0001] The invention belongs to the field of flat panel display technology, and in particular relates to a QLED and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and are widely used in light-emitting diodes, solar cells, and bioluminescence labeling. After more than 20 years of development, quantum dot synthesis technology has made remarkable achievements, and various high-quality quantum dot nanomaterials can be synthesized, and its photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QLEDs) with quantum dots as the light-emitting layer have become a promising next-generation display and solid-state Lighting source. Due to the advantages of high brightness, low power consumption, wide color gamut, and easy processing, quantum dot light-emitting diodes have received extensive attention and research in the fields of lighting and display in...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/14H01L33/00
Inventor 刘佳曹蔚然向超宇钱磊
Owner TCL CORPORATION
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