Light-emitting diode and manufacturing method thereof

Abstract

The invention discloses a manufacturing method of a light-emitting diode. The manufacturing method comprises the following steps: providing an epitaxial structure containing a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer in sequence; forming an expansion electrode on the surface of the second-type semiconductor layer, and carrying out heat treatment to form Ohmic contact with the second-type semiconductor layer; providing a temporary substrate, jointing the temporary substrate with the epitaxial structure, and removing the growth substrate, so that the surface of the first-type semiconductor layer is exposed; forming an Ohmic contact layer, a mirror surface layer and a bonding layer in sequence on the exposed surface of the first-type semiconductor layer; providing a conducting substrate, jointing the conducting substrate with the bonding layer, and removing the temporary substrate, so that the surface of the second-type semiconductor layer and the expansion electrode are exposed partially; chemically etching the exposed surface of the second-type semiconductor layer to form a coarse surface; and forming a bonding wire electrode on the surface of the second-type semiconductor layer, so that a closed circuit is formed by the bonding wire electrode and the expansion electrode.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] Light-emitting diodes have good photoelectric characteristics such as low energy consumption, long life, good stability, small size, fast response speed and stable light-emitting wavelength, and are widely used in lighting, home appliances, display screens and indicator lights. [0003] With the development of substrate transfer technology, a p-type upward AlGaInP-based light-emitting diode appears, which removes the growth substrate through two substrate transfer techniques, and joins the conductive substrate on the n-type semiconductor side, on the surface of the p-type semiconductor A pad electrode 142 and an extended electrode 141 are arranged on 120a. For high-power devices, a closed design of wire bonding electrode and extended electrode is often used, such as figure 1 Shown. In the...

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Problems solved by technology

However, the electrode material is generally magnetic. Since the welding wire electrode and the extended electrode form a series of closed loops, a certain magnetic field will be formed. During the roughening process, the charged particles in the roughening solution will move to cut the magnetic induction line, making the roughening solution Charged particles with different electrical properties are deflected in a certain direction in their respective magnetic fields, thus affecting the coarsening effect

At the same time, because the extended electrodes are not protected, side erosion often occurs, and the roughening solution etches to the bottom of the extended electrodes, resulting in the risk of fragile metal contacts or falling off

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