Unlock instant, AI-driven research and patent intelligence for your innovation.

Honeycomb multi-zone gas distribution plate

A gas distribution plate, processing area technology, applied in electrical components, gaseous chemical plating, semiconductor/solid-state device manufacturing, etc., can solve the problems of the type and number of precursor species, etc.

Inactive Publication Date: 2017-05-31
APPLIED MATERIALS INC
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some cases, the type and number of precursor species that can be introduced via a cross-flow gas delivery device is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Honeycomb multi-zone gas distribution plate
  • Honeycomb multi-zone gas distribution plate
  • Honeycomb multi-zone gas distribution plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Figure 1A A schematic cross-sectional view of a processing chamber 100 according to one embodiment is shown. The processing chamber 100 may be used to process one or more substrates, including depositing materials on the upper surface 116 of the substrate 108 . The processing chamber 100 may include a chamber body 103 including a lower wall 114 , side walls 136 , and an upper wall 138 . One or more of these walls 114 , 136 , 138 may define a treatment area 156 . The upper wall 138 may be made of, or coated with, a reflective material. Lower wall 114 may be transmissive to thermal radiation emitted by heat source 145, such as a plurality of lamps, and may be transparent to thermal radiation, defined as transmitting at least 95% of light of a given wavelength or spectrum. Materials that can be used for the lower wall 114 include quartz and sapphire.

[0017] In one embodiment, the lower wall 114 is a quartz dome and is transparent to the emission spectrum of the plur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments provided herein generally relate to an apparatus for gas delivering in a semiconductor process chamber. The apparatus may be a gas distribution plate that has a plurality of through holes and a plurality of blind holes formed therein. Process gases are provided into a processing volume of the semiconductor process chamber through the through holes of the gas distribution plate. The blind holes are utilized to control the temperature of the gas distribution plate using a phase change material.

Description

[0001] background technical field [0002] Embodiments described herein generally relate to apparatus and methods for improving gas distribution in semiconductor processing chambers. In particular, embodiments described herein relate to gas distribution plates. Background technique [0003] In semiconductor processing, various processes are generally used to form films that are functional in semiconductor devices. Among those processes, certain types of deposition processes are called epitaxy. In an epitaxial process, a gas mixture is generally introduced into a chamber containing one or more substrates on which epitaxial layers are to be formed. Process conditions are maintained to encourage the vapor to form a high quality material layer on the substrate. [0004] In an exemplary epitaxial process, a material such as a dielectric material or a semiconductor material is formed on an upper surface of a substrate. Epitaxial processes grow thin layers of ultrapure materia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCC23C16/45557C23C16/45565
Inventor 保罗·布里尔哈特常安忠埃德里克·唐劳建邦戴维·K·卡尔森埃罗尔·安东尼奥·C·桑切斯叶祉渊萨瑟施·库珀奥
Owner APPLIED MATERIALS INC