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Silicon wafer degumming cleaning method and silicon wafer degumming cleaning device

A silicon wafer degumming and silicon wafer technology, applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as low efficiency, strong randomness, and surface damage of silicon wafers, so as to improve cleaning efficiency, Improve the quality of degumming and reduce the effect of manual intervention

Inactive Publication Date: 2017-06-09
XINGTAI JINGLONG ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The traditional degumming cleaning process is generally manual. The process is to soak the silicon wafer in a hot water tank above 40°C for 50-130 minutes. The efficiency is low, and the surface of the silicon wafer is not clean. Insufficient degumming will lead to edge chipping and shards, etc. At the same time, manual operation is random and easy to cause damage to the surface of silicon wafers to varying degrees

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  • Silicon wafer degumming cleaning method and silicon wafer degumming cleaning device
  • Silicon wafer degumming cleaning method and silicon wafer degumming cleaning device

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Embodiment Construction

[0025] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0026] Such as figure 1 Shown is a schematic flow sheet of a silicon wafer degumming cleaning method of the present invention, comprising the following steps:

[0027] S1. Spray and rinse the silicon wafer with water to remove the residual cutting fluid on the surface of the silicon wafer.

[0028] S2. Ultrasonic cleaning is performed on the silicon wafer to remove pollutants and particles adsorbed on the surface of the silicon wafer.

[0029] S3. Soaking the silicon wafer in the solution to remove the residual glue adhered to the silicon wafer.

[0030] Silicon wafers are produced after wire-cutting silicon rods. During wire-cutting, polyethylene glycol and silicon carbide powder are fully mixed into a "mortar" by a beater. During the cutting process, steel wires are attached to the mortar through surface tension. The silicon rod ...

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Abstract

The invention belongs to the silicon wafer preparation technology field, and discloses a silicon wafer degumming cleaning method. By adopting a spraying washing step, an ultrasonic cleaning step, and an acid-deficient solution immersion degumming step, cutting fluid, pollutant particles, and residual gums on the surface of the silicon wafer are effectively cleaned. The invention also provides a silicon wafer degumming cleaning device. By adopting automatic program control, artificial intervention is reduced. The degumming quality of the silicon wafer is effectively improved, cleaning efficiency is improved, and the subsequent fine cleaning of the silicon wafer is facilitated.

Description

technical field [0001] The invention relates to the technical field of silicon wafer preparation, in particular to a silicon wafer degumming and cleaning method and device. Background technique [0002] With the development of society and the emphasis on environmental protection, more and more attention has been paid to the use of solar energy. Silicon wafers are the carrier of solar cells, and the quality of silicon wafers directly determines the conversion efficiency of solar cells. The cleanliness of the silicon wafer surface is a key factor affecting the quality of the silicon wafer. In order to obtain silicon wafers with high cleanliness, the silicon wafers after wire cutting need to go through two parts: degumming cleaning and fine cleaning, and degumming cleaning as the first cleaning process is an important process to obtain clean silicon wafers. [0003] The traditional degumming cleaning process is generally manual. The process is to soak the silicon wafer in a ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02H01L21/67
CPCH01L21/02057H01L21/67023H01L31/1804Y02P70/50
Inventor 王会敏张浩强曹祥瑞李立伟张稳
Owner XINGTAI JINGLONG ELECTRONICS MATERIAL