Exposure method for large-sized spliced product
An exposure method and large-scale technology, applied in the field of integrated circuit manufacturing, can solve the problem of high cost of photomasks, achieve the effects of reduced work intensity, good overlay accuracy and splicing alignment accuracy, and cost savings of photomasks
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[0029] In order to make the purpose, technical solution and advantages of the present invention clearer, the specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0030] A method for exposing large-scale spliced products, comprising the following steps:
[0031] S1: Divide the rectangular mask into six areas from top to bottom, which are PIXEL1 area, M1 area, T1 area, T2 area, M2 area and PIXEL2 area from top to bottom. The lengths of the six areas are equal to the length of the mask. width with a blackout band between each area.
[0032] The size of each area in the photomask is smaller than the maximum exposure size of the photolithography machine, the size of the entire photomask is larger than the maximum exposure size of the photolithography machine, and the M1 area, T1 area, T2 area and M2 area are all placed with overlay alignment marks, Used to monitor in-wafer overlay accu...
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