Semiconductor switch over-current detection method and converter

A semiconductor and converter technology, applied in the electronic field, can solve the problems of excessive stray inductance and excessive detection current, and achieve the effect of avoiding stray inductance and universal applicability

Inactive Publication Date: 2017-06-13
SHENZHEN HOPEWIND ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The main purpose of the present invention is to provide a semiconductor switch overcurrent detection method and a converter to solve the problems in the prior art that the detection current is too large and the introduction of more stray inductance

Method used

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  • Semiconductor switch over-current detection method and converter
  • Semiconductor switch over-current detection method and converter
  • Semiconductor switch over-current detection method and converter

Examples

Experimental program
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Embodiment 1

[0051] refer to Image 6 , Embodiment 1 of the present invention proposes a converter, including: a parallel semiconductor converter 50, a filter unit 10, and a semiconductor device 40, and also includes a detection capacitor group 20 and a detection device 30 connected to each other, and the detection capacitor group 20 Connected in parallel with the filter unit 10 , the detection capacitor group 20 includes at least one capacitor to form a detection branch. The capacitance value of the detection capacitor group 20 is much smaller than the capacitance value of the filter unit 10 .

[0052] The converter according to Embodiment 1 of the present invention further includes a protection control unit 60 , which is respectively connected to the detection device 30 and the semiconductor device 40 , receives a trigger signal from the detection device 30 and initiates the protection of the semiconductor device 40 .

[0053] The detection device 30 includes a current sensing unit and a...

example 1

[0055] Example 1: Two-level H-bridge topology

[0056] When the power topology is a full-bridge two-level H-bridge topology, the circuit topology is as follows Figure 7 shown. The circuit topology includes: a semiconductor converter 50, a first bus capacitor DC filter unit 11 (including a bus capacitor C 1 ~C n ), a detection capacitor group connected in parallel with the first bus capacitor DC filter unit 11 (including detection branch capacitor C k ), and detection branch capacitance C k In the current sensing unit 31 connected in series in the same branch, the current sensing unit 31 sends the detected current value to the current judging unit 32 connected to it, and when the current judging unit 32 judges that an overcurrent occurs, the protection control of the subsequent stage connection will be started Unit 60 , the protection control unit 60 executes a protection action by controlling the semiconductor device 40 connected across the DC bus.

[0057] Since the cur...

example 2

[0097] Example 2: Type I three-level topology

[0098] When the power topology is type I three-level, the circuit topology is as follows Figure 10 shown. This circuit topology includes: a semiconductor converter 50, a second bus capacitor DC filter unit 12 (by the capacitor C after series connection 1 and capacitance C 2 Composition, in practice, capacitance C 1 Can be composed of multiple capacitors in series, capacitor C 2 It can also be composed of a plurality of capacitors in series), connected across the bus and connected in parallel with the second bus capacitor DC filter unit 12 detection capacitor group 20 (by the capacitor C after series connection k1 and capacitance C k2 composition, the capacitance value of the detection capacitor group 20 is much smaller than the capacitance value of the second bus capacitor DC filter unit 12, and in practical applications C k1 Can be composed of multiple capacitors in series, C k2 It can also be composed of a plurality of ...

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PUM

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Abstract

The invention discloses a semiconductor switch overcurrent detection method and a converter. The converter includes a parallel filter unit and a semiconductor device, and also includes a detection capacitor group and a detection device connected to each other. The detection capacitor group is connected to the detection device. The filter unit is connected in parallel, and the detection capacitor group includes at least one capacitor. The semiconductor switch overcurrent detection method and the converter provided by the invention can realize the overcurrent detection of the semiconductor device by detecting a relatively small current, while avoiding excessive stray inductance.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a semiconductor switch overcurrent detection method and a converter. Background technique [0002] In high-voltage and high-power devices such as modern converters, a large number of semiconductor devices such as GTO, GCT, IGBT, and IGCT are used as their main switching devices. figure 1 It is the general structure of the converter, the topology is AC-DC-AC, the three-phase AC power is rectified and then converted into DC power, the DC circuit uses capacitors as energy storage links, and the DC becomes AC output to the load after the inverter. [0003] When the load of the converter is too heavy, the control parameters of the converter are not set properly, or the external circuit is short-circuited, it will cause the converter to over-current, and the current flowing through the semiconductor switch will increase significantly. If there is no quick protection, it will cause ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H7/20H02H7/12
CPCH02H7/205H02H7/1216
Inventor 常伟王武华郑大鹏周党生
Owner SHENZHEN HOPEWIND ELECTRIC CO LTD
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