Inductor structure and its formation method

Abstract

The invention provides an inductor structure and a forming method thereof. The inductor structure structurally comprises a substrate, multiple metal shielding layers and an inductance layer, wherein the surface of the substrate is provided with a grounding terminal; the metal shielding layers are located on the substrate and stacked, the upper and lower metal shielding layers are mutually and electrically connected, and the bottommost metal shield layer is electrically connected with the grounding terminal; each metal shielding layer comprises a first part and a second part disconnected with the first part, wherein the first part and the second part both comprise a plurality of parallel semicircular metal wires which are electrically connected together; the inductance layer is located on the uppermost metal shielding layer. The inductor structure inhibits interaction noise between the inductance layer and the substrate, increases the density of the metal layers in the unit area and meets design standards and technical requirements.

Description

technical field [0001] The present invention relates to the field of inductors, in particular to a multi-layered inductor structure and a method for forming the same. Background technique [0002] Inductors are generally composed of wires wound into a spiral shape. They are widely used in radio frequency (RF) circuits of communication equipment, such as mobile phones, wireless circuits, wireless modems, and other communication equipment. . [0003] With the advancement of integrated circuit technology, the inductor can be manufactured by using the integrated circuit technology, and the inductor and other components can be integrated on a single chip, so as to reduce the cost of manufacturing the circuit. At present, a common structure of an inductor integrated in an integrated circuit process is a convoluted metal layer. [0004] However, cross talk noise is easily generated between the inductor fabricated by the existing integration process and the substrate or with other...

AI Technical Summary

Problems solved by technology

[0004] However, cross talk noise is likely to be generated between the inductor and the substrate or other devices produced by the existing integrated process, which affects the performance of the integrated circuit.

Images