Patterned substrate used for epitaxy and manufacturing method thereof

Abstract

The invention provides a patterned substrate used for epitaxy. The patterned substrate comprises a silicon carbide layer. The surface of the silicon carbide layer is covered by a patterned graphene film. The position, which is corresponding to the surface atomic steps of the silicon carbide layer, of the graphene film is provided with a window. The invention also provides a manufacturing method of the patterned substrate used for epitaxy. The manufacturing method comprises the following steps that a substrate is provided, wherein the surface of the substrate is made of silicon carbide material; annealing is performed on the silicon carbide material so that silicon is enabled to be precipitated, and the graphene film is obtained on the surface of the silicon carbide material; and the graphene film is etched so that the position, which is corresponding to the surface atomic steps of the silicon carbide layer, of the graphene film is enabled to form the window.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a patterned substrate for epitaxy and a manufacturing method thereof. Background technique [0002] Using a patterned substrate is a method used in epitaxial technology to improve the crystal quality of epitaxial thin films. Through the patterned mask technology, the dislocations under the mask can be blocked. At the same time, the epitaxial film grown in the window area bends and merges the dislocations through lateral growth, thereby reducing the dislocation density of the epitaxial film and improving the crystallinity of the epitaxial film. quality. The crystal quality of the thin film has a great relationship with the performance of the semiconductor device, therefore, the patterned substrate is of great significance to the preparation of the semiconductor thin film. [0003] At present, the technology for preparing patterned substrates mainly adopts photolithography ...

AI Technical Summary

Problems solved by technology

[0003] At present, the technology for preparing patterned substrates mainly adopts photolithography technology, which requires high hardware configuration costs, complex processes, and generally micron-sized masks. To achieve nanometer-scale masks, electron beam exposure is required. technology, which not only has high hardware configuration costs, but also cannot realize large-area patterned substrates

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