A measurement method of image retention after proton irradiation of cmos image sensor
An image sensor and proton irradiation technology, which is applied in the field of radiation effect testing, can solve the problems of large gray value, increased measurement uncertainty, and increased uncertainty, and achieve high measurement accuracy, simple measurement method, Exclude the effect of random error
Active Publication Date: 2018-11-23
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology
The traditional system for measuring image retention of CMOS image sensors often ignores the temperature factor, which leads to the increase of uncertainty in the image retention test of CMOS image sensors after irradiation due to the change of ambient temperature, and may even cause the change value of image retention due to temperature fluctuations to be greater than that of radiation. Degradation value of photo-induced image retention
Random code signals may appear in the CMOS image sensor after proton irradiation, resulting in increased measurement uncertainty and even errors
In addition, after proton irradiation, when the CMOS image sensor continuously collects multiple frames of images, there may be problems with large gray values in the first few frames, resulting in the inability to accurately measure the image retention of the CMOS image sensor, which seriously affects the irradiation of the CMOS image sensor. Accuracy of damage assessment
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[0026] The present invention will be further described below in conjunction with the accompanying drawings: This embodiment provides a test method for image retention after proton irradiation of a CMOS image sensor. In this embodiment, the energy of the irradiated protons on the CMOS image sensor is 3 MeV, and the proton fluence is 1.0×10 10 p / cm 2 , 5.0×10 10 p / cm 2 , 1.0×10 11 p / cm 2 . The sample after proton irradiation is tested for image retention on the CMOS image sensor irradiation effect parameter test system, and the test results are shown in Figure 4 shown.
[0027] For the block diagram of the image retention test system of the CMOS image sensor, see figure 1 As shown, the test system includes a uniform light source, a test evaluation board, a dark box, a temperature control box, and a computer. The uniform light source provides uniform lighting conditions for the test image to stay, and the test evaluation board provides power for the device under test, and...
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The invention discloses a method for measuring image retention after proton irradiation of a CMOS image sensor. Temperature control is carried out by using a temperature control box, so that accurate measurement of image retention after proton irradiation of a CMOS image sensor can be realized. Calculation of an ith frame of image is carried out and an averaging method with a plurality of groups of images is employed, so that a random error caused by single measurement can be eliminated; and partial abnormal images are removed during calculation, so that measurement accuracy of image retention after proton irradiation of a CMOS image sensor can be improved. The method having advantages of high stability, high measurement precision, and simpleness is suitable for accurate measurement of image retention after proton irradiation of a CMOS image sensor and is capable of providing a technical support for irradiation damage assessment of the CMOS image sensor.
Description
technical field [0001] The invention relates to the technical field of radiation effect testing, in particular to a method for measuring image retention of a CMOS image sensor after proton irradiation. Background technique [0002] Complementary Metal Oxide Semiconductor (CMOS) image sensors have the advantages of small size, light weight, low power consumption, and high integration, and are widely used in space fields such as star sensors, sun sensors, and remote sensing imaging. It plays an important role in space tasks such as star recognition, star tracking, attitude determination, space docking, feature tracking, landing imaging for landing control, and target tracking. However, when the CMOS image sensor is used in the above fields, it will be damaged by space proton radiation, resulting in performance degradation or even functional failure of the CMOS image sensor. Therefore, it is of great significance to carry out research on proton radiation damage of CMOS image s...
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IPC IPC(8): G01M11/00
CPCG01M11/00
Inventor 薛院院王祖军刘静姚志斌何宝平郭红霞陈伟刘敏波盛江坤马武英金军山董观涛
Owner NORTHWEST INST OF NUCLEAR TECH