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Photobleaching-based section adjustable asymmetric M-Z optical waveguide sensor and manufacture method therefor

A sensor, asymmetric technology, applied in the directions of optical waveguides, light guides, instruments, etc., can solve the problems of sensor sensing accuracy degradation, etc., and achieve the effect of solving the plate error

Active Publication Date: 2017-06-20
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the following problems in the prior art: 1. Solve the problem of the degradation of the sensing accuracy of a single sensor, use photobleaching technology to change the refractive index of the sensor core material, thereby changing the sensing interval of the sensor, making the original The liquid to be measured with a refractive index in the degenerated range works in the non-degenerated range of the sensor

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  • Photobleaching-based section adjustable asymmetric M-Z optical waveguide sensor and manufacture method therefor
  • Photobleaching-based section adjustable asymmetric M-Z optical waveguide sensor and manufacture method therefor
  • Photobleaching-based section adjustable asymmetric M-Z optical waveguide sensor and manufacture method therefor

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Embodiment 1

[0036] On the methyl methacrylate PMMA base sheet 1 (thickness of 1mm, rectangular structure, long side length of 5cm, short side length of 3cm;) using imprint template 2 (waveguide section width 2μm, height is 2μm. For low-precision MZ sensors, in area a, l a =5mm; In the area b, the branch distance d=60μm, the branch angle θ=0.5°, the parameters of a and b are respectively a=30μm, b=7.1774×10 -4 ; Select the lateral length l of the straight waveguide in the c area straight =10000μm, the radius of curvature of the arc R=4500μm, and the slope K=0.01296, the arc length of the curved waveguide in the c region can be obtained. arc =58.3299, the length of the sensing arm Ls=20235μm, the length of the reference arm Lr=20000μm, the length difference between the sensing arm (long arm) and the reference arm (short arm) △L=235μm (the sensing interval is (1.33~1.50)) . For M-Z sensors with high accuracy, in area a, l a =5mm; In the area b, the branch distance d=60μm, the branch angle θ=0...

Embodiment 2

[0040] In imprint template 2 (cross-sectional waveguide width 3μm, height 3μm,) for the low-precision M-Z sensor, in area a, l a =5mm; In the area b, the branch distance d=60μm, the branch angle θ=0.5°, the parameters of a and b are respectively a=30μm, b=7.1774×10 -4 ; Select the lateral length l of the straight waveguide in the c area straight =10000μm, the radius of curvature of the arc R=4500μm, and the slope K=0.01269, the arc length of the curved waveguide in the c region can be obtained. arc = 57.0974, the length of the sensing arm Ls = 20230.0000 μm, the length of the reference arm Lr = 20000 μm, the length difference between the sensing arm (long arm) and the reference arm (short arm) ΔL = 230.0000 μm. For high-precision M-Z sensors, in area a, l a =5mm; In the area b, the branch distance d=60μm, the branch angle θ=0.5°, the parameters of a and b are respectively a=30μm, b=7.1774×10 -4 ; Select the lateral length l of the straight waveguide in the c area straight =10000μ...

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Abstract

The invention discloses a photobleaching-based section adjustable asymmetric M-Z optical waveguide sensor and a manufacture method therefor and belongs to the technical field of optical waveguide integrated chip and manufacture thereof. The sensor consists of a low precision asymmetric M-Z sensor and a high precision asymmetric M-Z sensor, the low precision sensor is large in sensing section range and is monotonous, the low precision sensor is used for determining a low precision value of a refractive index to be measured, and therefore a work section of the high precision M-Z sensor can be determined; the high precision sensor can be used for controlling a work section zone of the sensor via after light exposure. According to the sensor and the manufacture method therefor, a problem of sensor section degeneration is solved via adoption of photosensitive polymeric material, a multiple sensor array can be replaced by a double M-Z structure, light sources can be saved and detector costs can be lowered. According to the sensor, a polymer groove is manufactured via impression; photosensitive polymer core layer materials are spin coated and solidified; the sensor is obtained via dissociation and polishing operation; the sensor is simple in manufacture technology, low in material and manufacture cost and high in precision; the sensor is particularly suitable for portable and disposable sensing polymer chips.

Description

Technical field [0001] The invention belongs to the technical field of optical waveguide integrated chips and their preparation, and in particular relates to a Mach-Zindel optical waveguide sensor with a photosensitive polymer-based sensing interval that can be adjusted after device preparation and a preparation method thereof. Background technique [0002] The Mach-Zehnder (M-Z) optical waveguide sensor links the refractive index of the liquid to be measured with the intensity of the detected light signal, and does not need to detect the spectrum, its detection cost is low, and the device structure is simple. The working principle of the M-Z optical waveguide sensor is to use the optical waveguide to conduct the detection light, and the detection light is divided into two arms for transmission through the Y-shaped beam splitter. The two arms are in contact with the liquid to be measured. According to the principle of evanescent wave sensing, the phase of the light field in the t...

Claims

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Application Information

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IPC IPC(8): G02B6/12G02B6/125G02B6/13G01N21/41
CPCG01N21/4133G02B6/12G02B6/125G02B6/13G02B2006/12159
Inventor 衣云骥曹悦郑尧孙月田亮张大明郑杰孙小强陈长鸣
Owner JILIN UNIV