Semiconductor laser and manufacturing method thereof
A laser and semiconductor technology, applied in the semiconductor field, can solve the problems of increased laser threshold current density, deteriorated nitride laser performance, and reduced slope efficiency, etc., to achieve the effects of reducing heat loss, improving performance, and reducing contact resistance
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Embodiment 1
[0027] refer to figure 1 The semiconductor laser provided in this embodiment includes a substrate 1, a lower confinement layer 2, a lower waveguide layer 3, a mask layer 4, an active layer 5, an upper waveguide layer 6, an electron blocking layer 7, an upper confinement layer 8 and a contact layer 9. The lower confinement layer 2 is disposed on the substrate 1, and the mask layer 4 is disposed on the lower confinement layer 2, which includes a first mask waveguide 41 and a second mask waveguide 42 arranged at intervals along a direction parallel to the lower confinement layer 2 . The lower waveguide layer 3 , the active layer 5 , the upper waveguide layer 6 , the electron blocking layer 7 , and the upper confinement layer 8 are sequentially stacked and arranged between the first masked waveguide 41 and the second masked waveguide 42 . The contact layer 9 is arranged on the upper confinement layer 8 and completely covers the upper confinement layer 8, wherein the refractive i...
Embodiment 2
[0043] refer to image 3 The difference between the semiconductor laser provided in this embodiment and the first embodiment is that in this embodiment, the first masked waveguide 41 and the second masked waveguide 42 are located on both sides of the lower waveguide layer 3 and the lower waveguide layer 3 extends to The upper surfaces of the first mask waveguide 41 and the second mask waveguide 42 . The active layer 5 completely covers the lower waveguide layer 3 and extends to the upper surfaces of the first mask waveguide 41 and the second mask waveguide 42, and the upper waveguide layer 6 completely covers the active layer 5 and extends to the first mask waveguide 41 and the upper surface of the second mask waveguide 42. On the upper surface of the second mask waveguide 42, the electron blocking layer 7 completely covers the upper waveguide layer 6 and extends to the upper surfaces of the first mask waveguide 41 and the second mask waveguide 42, and the upper confinement la...
Embodiment 3
[0046] refer to Figure 4 The difference between the semiconductor laser provided in this embodiment and the second embodiment is that the semiconductor laser in this embodiment further includes a first buffer layer 10 , a transition layer 11 and a second buffer layer 12 . The first buffer layer 10 is disposed between the lower waveguide layer 3 and the lower confinement layer 2, the first buffer layer 10 is located between the first mask waveguide 41 and the second mask waveguide 42 and extends to the first mask waveguide 41 and the second mask waveguide 42. On the surface of the second mask waveguide 42 , the lower waveguide layer 3 completely covers the first buffer layer 10 and extends to the upper surfaces of the first mask waveguide 41 and the second mask waveguide 42 . The transition layer 11 is disposed between the mask layer 4 and the lower limiting layer 2 . The second buffer layer 12 is disposed between the lower confinement layer 2 and the substrate 1 . The first...
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