A method for monitoring chamber purity
A technology of purity and chamber, which is applied in the field of chamber purity monitoring, can solve problems such as film quality degradation, epitaxial growth failure, and inability to effectively detect impurities, so as to achieve the effect of improving success rate, increasing probability or possibility
Active Publication Date: 2020-02-11
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
Any trace of impurities may lead to failure of epitaxial growth or degradation of the quality of the grown film
[0003] The current chamber purity monitoring method cannot effectively find the impurities that may exist or appear. Therefore, it is necessary to propose a new chamber purity monitoring method
Method used
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Embodiment 1
[0030] Below, refer to figure 1 as well as Figure 2A to Figure 2C A method for monitoring the purity of a chamber according to an embodiment of the present invention is described in detail. in, figure 1 A flow chart showing a method for monitoring chamber purity according to an embodiment of the present invention; Figure 2A ~ Figure 2C A cross-sectional view showing the structure of a device formed in the relevant steps of the method for monitoring chamber purity according to an embodiment of the present invention.
[0031] The monitoring method of the chamber purity of the present embodiment comprises the steps:
[0032] Step S101: providing a semiconductor substrate.
[0033] like Figure 2A As shown, a semiconductor substrate 200 is provided. The semiconductor substrate 200 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multilayer structures composed of these s...
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The invention provides a chamber purity monitoring method, which relates to the technical field of semiconductors. The method comprises steps: S101, a semiconductor substrate is provided; S102, a baking process is executed on the semiconductor substrate; S103, an epitaxial thin film is formed on the semiconductor substrate; S104, the steps S102 and S103 are repeatedly executed to form more than two layers of epitaxial thin films on the semiconductor substrate; and S105, impurity element analysis is carried out on the semiconductor substrate on which the more than two layers of epitaxial thin films are formed. The method of the invention can capture any hardware or material offset which possibly introduces an impurity source to the process chamber as much as possible, elimination of the impurity source later is facilitated, and the epitaxial process success rate and the epitaxial thin film quality are improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for monitoring the purity of a chamber. Background technique [0002] Epitaxial silicon germanium (e-SiGe) is widely used in advanced CMOS technology to apply compressive stress to the channel region, so that the performance of PMOS devices can be significantly improved. But the epitaxial silicon germanium process has many challenges, such as integration, defect control, selectivity and so on. One of the big challenges is that the epitaxial silicon germanium process is very sensitive to impurities such as C, O, N, Cl, etc., not only has high requirements on the cleaning of incoming wafers and process reaction materials (such as gases), but also has high requirements on the chamber. The purity requirements of the environment are also very high. Any trace of impurities may lead to failure of epitaxial growth or degradation of the quality of the grown film. [000...
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IPC IPC(8): H01L21/67
CPCH01L21/67253
Inventor 何永根
Owner SEMICON MFG INT (SHANGHAI) CORP