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a power device

A technology of power devices and printed circuit boards, applied in the field of power semiconductors, can solve problems such as poor heat dissipation performance, low reliability, and uneven pressure on chips, so as to improve unbalanced force, ensure consistency, and improve the overall structure. simple compact effect

Active Publication Date: 2019-03-29
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a power device to solve the problem of low reliability of traditional power devices due to poor heat dissipation and uneven pressure on the chip

Method used

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Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0033] figure 1 It is the front view of the power device of the present invention. Such as figure 1 As shown, the power device includes: a conductive cover plate 1 , a conductive thin layer 2 , a printed circuit...

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Abstract

The invention discloses a power device. The power device includes a conductive cover plate, a conductive thin layer, a cylinder type printed circuit board, n power device chips and a conductive substrate, wherein the n power device chips and the printed circuit board are arranged on the conductive substrate; each power device chip is arranged on the conductive substrate in a circumference symmetrical mode; the control end of each power device chip is connected with an internal path of the printed circuit board through a bonding line; the internal path of the printed circuit board is connected with an external power supply through an interface; the input end of each power device chip is electrically connected with the upper surface of the conductive substrate, and the output end of each power device chip is electrically connected with the lower surface of the conductive thin layer; and the conductive thin layer is electrically connected with the conductive cover plate. The power device has the advantages of having consistency of each chip environmental parameter, improving current distribution of power chips in parallel, modifying the problem that the power chips are unbalanced in bearing, being able to realize double face heat radiation, and increasing reliability of the power device.

Description

technical field [0001] The invention relates to the field of power semiconductors, in particular to a power device. Background technique [0002] Modern power electronic devices have the advantages of high power, simple driving and high switching frequency. Electronic components with large output power are called power devices, including: high-power transistors, thyristors, bidirectional thyristors, GTOs, MOSFETs, IGBTs, etc. For example, the power device Insulated Gate Bipolar Transistor (IGBT) is a gate voltage type drive device, which has the advantages of high operating frequency, high power density, high reliability, and easy series connection. It has been widely used in high-voltage and high-power occasions such as inverters and flexible DC transmission fields. [0003] In the prior art, power devices generally adopt a module structure. Taking the power device IGBT as an example, one IGBT power device includes several IGBT chips. The initial packaging form of IGBT is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/06H01L23/367H01L23/49H01L25/07H01L23/00
Inventor 赵志斌倪筹帷范思远
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)