Modeling method of microwave GaN power device

Abstract

The invention discloses a modeling method of a microwave GaN power device. The modeling method comprises the following steps: establishing a small-signal equivalent circuit model of the GaN power device and extracting small-signal model parameters; carrying out small-signal model parameter optimization according to actually measured multi-bias scattering parameters; establishing a big-signal equivalent circuit model of the GaN power device; extracting big-signal model parameters; taking the actually measured multi-bias scattering parameters and a big-signal model property parameter as targets and tuning and optimizing the big-signal model parameters; carrying out modeling on a plurality of batches of the GaN power devices according to the steps, so as to obtain the scattering parameters and a big-signal statistical model of a process line. According to the modeling method of the microwave GaN power device, provided by the invention, the small-signal equivalent circuit model of the GaN power device and the big-signal equivalent circuit model of the GaN power device are established, and the scattering parameters and the big-signal statistical model of the GaN process line are established according to model parameter statistical properties, and the accuracy of the model is improved.

Description

technical field [0001] The invention relates to the technical field of GaN HEMT (gallium nitride high electron mobility transistor) devices, in particular to a modeling method for microwave GaN power devices. Background technique [0002] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has an extremely important application in microwave and millimeter wave solid-state power circuits due to its high frequency and high power density. The current mainstream method of circuit design is usually based on the device model that describes the characteristics of the device under small-signal working conditions and large-signal working conditions in the form of an equivalent circuit, so the device model is the premise of using the device for circuit design. [0003] However, due to unintentional doping and process parameter fluctuations in the device manufacturing process, it will affect the consistency of device performance, thereby affecting the yield of circuit design. ...

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Problems solved by technology

[0003] However, due to unintentional doping and process parameter fluctuations in the device preparation process, it will affect the consistency of device performance, thereby affecting the yield of circuit design. Therefore, it is necessary to guide the analysis of circuit yield by establishing a circuit model that includes process statistical characteristics.

Traditional device methods are based on the small-signal model or large-signal model parameters of a single GaN device, which cannot analyze the statistical characteristics of multiple GaN power devices prepared by one process line, so the accuracy is insufficient.

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