A method to realize the controllable preparation of vertical and horizontal graphene in PECVD
A graphene and horizontal technology, applied in the field of graphene preparation, can solve the problems of light absorption effect, reduced conductivity, and reduced performance of graphene devices, etc., and achieve the effects of high light transmittance, good uniformity, and excellent conductivity
Active Publication Date: 2018-12-04
北京石墨烯研究院有限公司
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Problems solved by technology
However, for the graphene nanowall structure, due to the severe carrier scattering effect brought by the abundant edge structure, the conductivity of graphene in the two-dimensional plane is greatly reduced, which greatly reduces the performance of graphene devices. performance
At the same time, when the graphene nanowall structure is directly grown on a transparent insulating substrate, due to the large specific surface area of the structure, it will cause a serious light absorption effect, which will seriously reduce the intrinsic light transmittance of the substrate, resulting in its transparent and conductive properties. Applications are limited in terms of devices
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Embodiment 1
[0041] Embodiment 1 Preparation of laterally two-dimensional tiled graphene on glass substrate at low temperature in PECVD of the present invention
[0042] Use ethanol, acetone, and isopropanol to completely immerse the glass substrate, wash the glass substrate three times in a cycle, and then place the glass substrate in a Faraday cage. A glass substrate to be wrapped by a Faraday cage ( Figure 7 ) in a PECVD chamber, heat the substrate to ~580°C, adjust the amount of argon, methane and hydrogen (200Ar: 10CH 4 : 40H 2 ), the power of plasma generation was 120W, and the growth was 60 minutes.
[0043] The picture of the prepared graphene glass is as Figure 8 As shown, the graphene is uniformly distributed on the surface of the glass substrate, and the graphene thickness is uniform at the edge and the inner region of the glass substrate. Raman( Figure 9 ) also reflects this uniformity. SEM and AFM characterization of graphene glass such as Figure 10 , 11 As shown, ...
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Abstract
The invention belongs to the field of graphene preparation, and particularly relates to a method of achieving controllable preparation of longitudinal and transverse graphene in PECVD (plasma enhanced chemical vapor deposition).The method comprises the following steps: 1) cleaning a glass substrate with alcohol, acetone and isopropanol, blowing the glass substrate to be dry with argon, 2) putting the glass substrate wrapped with a faraday cage in a PECVD cavity, heating the substrate to 540-580 DEG C, 3) adding the argon, methane and hydrogen to generate plasma for growth for 60-120min, and 4) shutting down a plasma generation source, naturally cooling to below 50 DEG C at an argon atmosphere, and opening the cavity to form a graphene glass sample.The product prepared by a two-dimensional transverse graphene technology on the transparent insulation substrate at a low temperature by a faraday cage effect in the PECVD has better conductivity, light transmittance and uniformity than a longitudinal graphene nano wall prepared without the faraday cage effect on the same substrate and at the same temperature.
Description
technical field [0001] The invention belongs to the field of graphene preparation, and in particular relates to a method for realizing the controllable preparation of longitudinal and transverse graphene in PECVD. Background technique [0002] Plasma-enhanced chemical vapor deposition (PECVD) is an ideal method for low-temperature preparation of graphene on insulating substrates. In PECVD, the typical structure of graphene is the structure of longitudinal graphene nanowalls. This special structure has wide applications in biosensing, supercapacitors, energy storage, etc. due to its abundant edges and large specific surface area. However, for the graphene nanowall structure, due to the severe carrier scattering effect brought by the abundant edge structure, the conductivity of graphene in the two-dimensional plane is greatly reduced, which greatly reduces the performance of graphene devices. performance. At the same time, when the graphene nanowall structure is directly gr...
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IPC IPC(8): C01B32/186
CPCC01P2002/82C01P2004/03C01P2004/04C01P2006/40
Inventor 刘忠范亓月张艳锋
Owner 北京石墨烯研究院有限公司