Trench gate IGBT
A trench gate and trench technology is applied to trench gate IGBTs. It can solve the problems of increasing the trench spacing and increasing the contact area of the emitter, so as to reduce the conduction voltage drop and achieve the effect of good grounding.
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Embodiment 1
[0030] figure 2 It is a structural schematic diagram of an embodiment of the trench gate IGBT of the present invention, such as figure 2 As shown, this embodiment provides a trench gate IGBT, including: a semiconductor substrate 1 and a first structure 2, the first structure 2 includes a first trench gate structure 21 located in the surface of the semiconductor substrate 1 and a second trench gate structure 22; wherein, the second trench gate structure 22 is located between two first trench gate structures 21, the first trench gate structure 21 is a true gate, and the second trench gate structure 22 is Dummy gate; the emitter metal 3 is in contact with the second trench gate structure 22 .
[0031] “Inside the surface of the semiconductor substrate 1 ” in this specification refers to a region extending downward from the surface of the semiconductor substrate 1 to a certain depth, which is a part of the semiconductor substrate 1 .
[0032] Wherein, the semiconductor substra...
Embodiment 2
[0045] This embodiment is a supplementary description based on the above embodiments.
[0046] Figure 4 It is a schematic structural diagram of Embodiment 2 of the trench gate IGBT of the present invention; as Figure 4 As shown, this embodiment provides a trench gate IGBT, including: a semiconductor substrate 1 and a first structure 2, the first structure 2 includes a first trench gate structure 21 located in the surface of the semiconductor substrate 1 and a second trench gate structure 22; wherein, the second trench gate structure 22 is located between two first trench gate structures 21, the first trench gate structure 21 is a true gate, and the second trench gate structure 22 is Dummy gate; the emitter metal 3 is in contact with the second trench gate structure 22 .
[0047] The second trench gate structure 22 includes a first doped region 221, an oxide layer 222 covering the inner surface of the trench and polysilicon 223 filled in the trench, wherein the first doped ...
Embodiment 3
[0053] Figure 8 It is a schematic structural diagram of Embodiment 3 of the trench gate IGBT of the present invention; as Figure 8 As shown, this embodiment provides a trench gate IGBT, including: a semiconductor substrate 5, a first trench gate structure 71 and a second trench gate structure 72 located in the surface of the semiconductor substrate 5; wherein, the first trench The trench gate structure 71 is located between two second trench gate structures 72, the first trench gate structure 71 is a true gate, and the second trench gate structure 72 is a dummy gate; the emitter metal 6 and the second trench gate structure 72 contacts.
[0054] Wherein, the semiconductor substrate 5 may include semiconductor elements, such as silicon or silicon germanium of single crystal, polycrystalline or amorphous structure, and may also include a mixed semiconductor structure, such as silicon carbide, alloy semiconductor or a combination thereof, which is not limited here . The semic...
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