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GeTe/Bi<2>Te<3> superlattice structure storage medium used for low-power-consumption phase-change memory

A technology of phase change memory and storage medium, applied in static memory, digital memory information, information storage, etc., to achieve the effect of solving excessive operating current and low power consumption

Inactive Publication Date: 2017-07-11
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

The excessive operating current of phase change memory is the main factor limiting its wide application, which poses a challenge to the current driving capability of the transistor corresponding to the memory cell

Method used

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  • GeTe/Bi&lt;2&gt;Te&lt;3&gt; superlattice structure storage medium used for low-power-consumption phase-change memory
  • GeTe/Bi&lt;2&gt;Te&lt;3&gt; superlattice structure storage medium used for low-power-consumption phase-change memory

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Embodiment Construction

[0022] The present invention is further analyzed below in conjunction with specific examples.

[0023] 1. Bi 2 Te3 / GeTe superlattice structure preparation specific preparation method

[0024] Here is a list of Bi 2 Te 3 / GeTe superlattice structure magnetron sputtering physical vapor deposition method preparation method. In order to form high-quality epitaxial heterointerfaces, Bi 2 Te 3 The preparation of GeTe and GeTe layers requires the crystal grains to be as large as possible, and the perfect state is a single crystal. However, under the condition of magnetron sputtering, due to the limitation of the physical principle of sputtering, it is difficult to form a single crystal, so we can only adjust the preparation parameters to prepare Bi with the largest possible grain size. 2 Te 3 and GeTe layers. According to Bi 2 Te 3 According to the kinetic characteristics of GeTe crystal formation, the preparation conditions require that the temperature be as high as possi...

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Abstract

The invention provides a GeTe / Bi<2>Te<3> superlattice structure storage medium used for a low-power-consumption phase-change memory. The GeTe / Bi<2>Te<3> superlattice structure storage medium includes at least a Bi<2>Te<3> layer and a GeTe material layer stacking unit, Bi<2>Te<3> layers and GeTe material layers are alternatively arranged between adjacent units, the thickness range of the Bi<2>Te<3> layers is 10-50 angstrom, the thickness range of the GeTe layers is 10-25 angstrom, the Bi<2>Te<3> layer comprises a plurality of Bi<2>Te<3> units, and the adjacent Bi<2>Te<3> units are combined through the van der waals effect. According to the application of the Bi<2>Te<3> / GeTe superlattice structure, the power consumption of a phase-change memory device can be reduced more effectively.

Description

technical field [0001] The invention relates to a GeTe / Bi used for low power consumption phase change memory 2 Te 3 Superlattice storage media. [0002] technical background [0003] Phase-change memory technology is based on the idea that phase-change thin films can be applied to phase-change storage media proposed by Ovshinsky in the late 1960s and early 1970s. It is a memory device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lead-out electrode materials. The basic principle of phase change memory is to use electric pulse signal to act on the device unit, so that the phase change material undergoes reversible phase transition between amorphous state and polycrystalline state. By distinguishing the high resistance in the amorphous state and the polycrystalline state The low resistance can realize the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C13/00
CPCG11C13/0004H10N70/881H10N70/8828
Inventor 任堃
Owner HANGZHOU DIANZI UNIV