Electric energy recycling and heat dissipation device of big-power IGBT device

A technology of electric energy recovery and heat dissipation device, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of low power generation efficiency and energy waste due to temperature difference, and achieve effective energy utilization and high power generation stability Effects on Sex and Reliability

Pending Publication Date: 2017-07-21
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of energy waste caused by the waste heat emitted by the above-mentioned IGBT and to overcome the shortcomings of low power generation efficiency due to temperature difference, and to provide a new type of electric energy recovery and utilization device based on semiconductor thermoelectric modules implemented on high-power IGBT devices

Method used

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  • Electric energy recycling and heat dissipation device of big-power IGBT device
  • Electric energy recycling and heat dissipation device of big-power IGBT device
  • Electric energy recycling and heat dissipation device of big-power IGBT device

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Embodiment Construction

[0019] In order to make the present invention clearer, preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments are only for illustrating the present invention, but not for limiting the protection scope of the present invention.

[0020] A high-power IGBT device electric energy recovery cooling device in this example includes a high-power IGBT device, a heat sink, a semiconductor thermoelectric module, a voltage stabilizing circuit, a storage battery and a water-cooling pipeline. This device connects the output ends of the voltage stabilizing circuits behind several semiconductor thermoelectric modules in series and in parallel to ensure the final output of sufficient electric power.

[0021] like figure 1 Shown is the principle block diagram of the present invention, the fin 4 is fixed together with the thermoelectric power generation sheet 2 through ...

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Abstract

The invention provides an electric energy recycling and heat dissipation device of a big-power IGBT device. The device is formed by a big-power IGBT device, a cooling fin, a semiconductor thermoelectric module, a voltage stabilizing circuit, a storage battery and a water cooling pipeline. According to the invention, a temperature difference power generation sheet of the semiconductor thermoelectric module is fixed on a fin of the cooling fin through a buckle; the semiconductor thermoelectric module achieves thermoelectric conversion by use of the temperature difference power generation principle; an electric energy output end of the semiconductor thermoelectric module is connected with an input end of the voltage stabilizing circuit; an output end of the voltage stabilizing circuit is connected with the storage battery; massive heat energy of the big-power IGBT device can be converted into usable electric energy; the device can be widely applied in a convertor station, a transformer station and the like in an actual electric power system; and obtained electric energy can be stored and applied to other electric equipment.

Description

technical field [0001] The invention relates to the field of thermoelectric power generation of semiconductors, in particular to a device for recovering and dissipating heat from high-power IGBT devices for thermoelectric power generation. Background technique [0002] With the development of power electronics technology, IGBT devices have been widely used in medium and high power applications. For example, in the converter station of the direct current transmission system, IGBT is often used as the converter valve to realize the conversion of AC and DC. However, due to the conduction loss and switching loss in the working process of the IGBT, the heat generated by the IGBT is relatively large. If the heat cannot be dissipated smoothly, the temperature of the device will rise too high and the module will fail. If a large amount of heat generated by IGBT can be used for power generation, not only can the cooling process be carried out smoothly, but also industrial waste heat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02N11/00H01L23/38H01L23/40
CPCH02N11/002H01L23/38H01L23/4093
Inventor 谢帆唐国庆熊能钟丹婷张波
Owner SOUTH CHINA UNIV OF TECH
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