A coating process for crystalline silicon solar cells
A solar cell, crystalline silicon technology, applied in metal material coating process, circuit, sputtering and other directions, can solve the problems of uneven film thickness, complex crystal structure, etc., to achieve good product quality, uniform thickness, improve work efficiency The effect of efficiency
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Embodiment 1
[0026] A coating process for a crystalline silicon solar cell, using sputtering of a single-layer boron-aluminum compound anti-reflection film on the surface of a crystalline silicon substrate; the sputtering method of a single-layer boron-aluminum compound anti-reflection film comprises the following steps:
[0027] Step S1, pre-cleaning the surface of the crystalline silicon substrate, specifically: cleaning with ultrasonic waves added with RBS25 liquid cleaning agent, the ultrasonic frequency is 50kHz, the temperature is 40°C, and the power density is 0.1W / cm 2 ;
[0028] Step S2, performing an etching operation on the pre-cleaned crystalline silicon surface, specifically: first use HNO with a volume concentration of 10% 3 The aqueous solution oxidizes N-type silicon containing phosphorus impurities, and then uses HF aqueous solution with a volume concentration of 2% to remove silicon oxide.
[0029] In step S3, the etched crystalline silicon is transferred to the magnetro...
Embodiment 2
[0031] A coating process for a crystalline silicon solar cell, using sputtering of a single-layer boron-aluminum compound anti-reflection film on the surface of a crystalline silicon substrate; the sputtering method of a single-layer boron-aluminum compound anti-reflection film comprises the following steps:
[0032] Step S1, pre-cleaning the surface of the crystalline silicon substrate, specifically: cleaning with ultrasonic waves added with RBS35 type liquid detergent medium, the ultrasonic frequency is 200kHz, the temperature is 60°C, and the power density is 0.8W / cm 2 ;
[0033] Step S2, performing an etching operation on the pre-cleaned crystalline silicon surface, specifically: first use HNO with a volume concentration of 30% 3 The aqueous solution oxidizes N-type silicon containing phosphorus impurities, and then uses 5% HF aqueous solution to remove silicon oxide.
[0034] In step S3, the etched crystalline silicon is transferred to the magnetron sputtering chamber as...
Embodiment 3
[0036] A coating process for a crystalline silicon solar cell, using sputtering of a single-layer boron-aluminum compound anti-reflection film on the surface of a crystalline silicon substrate; the sputtering method of a single-layer boron-aluminum compound anti-reflection film comprises the following steps:
[0037] Step S1, pre-cleaning the surface of the crystalline silicon substrate, specifically: cleaning with ultrasonic waves added with RBS IND 940 liquid detergent medium, the ultrasonic frequency is 125kHz, the temperature is 50°C, and the power density is 0.4W / cm 2 ;
[0038] Step S2, performing an etching operation on the pre-cleaned crystalline silicon surface, specifically: first use HNO with a volume concentration of 20% 3 The aqueous solution oxidizes N-type silicon containing phosphorus impurities, and then uses HF aqueous solution with a volume concentration of 3.5% to remove silicon oxide.
[0039] In step S3, the etched crystalline silicon is transferred to t...
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