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A semiconductor device and its detection structure, electronic device

A technology for detecting structures and electronic devices, which is applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc. It can solve problems that affect the cycle test of final devices, reduce detection efficiency, and cannot detect floating gate structures.

Active Publication Date: 2019-10-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As the size of NAND flash memory shrinks, the leakage between the floating gates is fatal to the yield and cycle of the device. However, because the floating gate is covered by the control gate and cannot be connected to the contact hole, the conventional test The structure cannot be used for detection of leakage between floating gates
[0004] The current test structure can detect the leakage of the bit line and the word line, but the floating gate structure cannot be detected. Due to the above limitations, if a short circuit occurs between the floating gates, it is difficult for the detection engineer to find the short circuit. location, which will not only affect the yield rate of the device and even affect the cycle test of the final device, but also need more time to determine the location of the short circuit, which reduces the detection efficiency

Method used

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  • A semiconductor device and its detection structure, electronic device
  • A semiconductor device and its detection structure, electronic device
  • A semiconductor device and its detection structure, electronic device

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Embodiment 1

[0048] In order to solve the problems existing in the prior art, the present invention provides a detection structure of a semiconductor device. The detection structure will be further described below in conjunction with the accompanying drawings, wherein, Figure 1a-1b It is a top view of the detection structure described in a specific embodiment of the present invention; Figure 2a It is a cross-sectional view along the word line direction after removing the control gate in the detection structure in a specific embodiment of the present invention; Figure 2b It is a cross-sectional view along the direction of the bit line after removing the control gate in the detection structure in a specific embodiment of the present invention.

[0049] The present invention provides a detection structure of a semiconductor device, wherein the semiconductor device includes a plurality of active regions 101 arranged at intervals, and a gate structure is formed on the active region, and the g...

Embodiment 2

[0096] The present invention also provides a semiconductor device, which passes the detection structure in the first embodiment.

[0097] The present invention provides a detection structure of a semiconductor device, wherein the semiconductor device includes a plurality of active regions 101 arranged at intervals, and a gate structure is formed on the active region, and the gate structure includes sequentially formed The floating gate 107 and the control gate 108, the test structure includes at least two first test units independently arranged;

[0098] Wherein at least two of the first test units are respectively located in two first cutting regions 103, and the control gate is completely removed in the first cutting region 103 to expose the floating gate, and the first cutting The region spans the active region and the extending direction of the first cutting region is perpendicular to the extending direction of the active region 101;

[0099] Wherein, the first test unit ...

Embodiment 3

[0142] The present invention also provides an electronic device, including the semiconductor device described in the second embodiment. Wherein, the semiconductor device is the semiconductor device described in the second embodiment, or the semiconductor device including the detection structure described in the first embodiment.

[0143] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the semiconductor device. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

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PUM

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Abstract

The invention relates to a semiconductor device, a detection structure thereof and an electronic device. The detection structure is used for detecting the semiconductor device with floating gates and control gates. The detection structure comprises first contact holes and second contact holes located on the floating gates exposed after the control gates are removed; the first contact holes and the second contact holes are respectively electrically connected with adjacent floating gates for applying different voltage to adjacent floating gates to test leakage current between the adjacent floating gates. The detection structure comprises the contact holes and metal layers which are formed to a chain and is located above the floating gates and is directly electrically connected with the floating gates for detecting defects such as electric leakage or short circuit of the floating gates, and the detection structure detects the floating gates in a bit line direction and a word line direction independently.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a semiconductor device, a detection structure thereof, and an electronic device. Background technique [0002] Semiconductor memory devices are increasingly used in various electronic devices. For example, non-volatile semiconductor memory can be used in cellular telephones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices, and other devices. With the rapid development of the electronics industry, especially consumer electronics, the development of semiconductor storage devices has increasingly become one of the benchmarks for the development of electronic technology. From the initial dominance of DRAM (that is, dynamic random access memory) to now FlashMemory (that is, non-volatile flash memory) as the largest camp; the development speed of semiconductor memory continues to challenge Moore's Law, and NAND F...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/34
Inventor 黄军查源清
Owner SEMICON MFG INT (SHANGHAI) CORP