Semiconductor structure, forming method thereof and test method

Abstract

The invention discloses a semiconductor structure, a forming method thereof and a test method. The semiconductor structure comprises a front-end chip, a metal layer located on the back surface of the front-end chip and a protection layer located on the metal layer, wherein the protection layer can protect the metal layer from being polluted. Thereby, the protection layer is used to protect the metal layer on the semiconductor structure from being oxidized by air, moisture and other substances, and generation of white spot defects is avoided. In the case of test, the protection layer can be removed, the test can be carried out normally, and the product yield can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure, its forming method and testing method. Background technique [0002] With the continuous development of semiconductor technology, integrated circuits have grown from a few interconnected devices fabricated on a single chip to millions of devices. Current integrated circuits offer increasing performance and complexity. Metal-oxide-semiconductor (MOS) transistors are the most basic devices in semiconductor manufacturing, and are widely used in various integrated circuits. Therefore, the industry has never stopped improving and optimizing the performance of MOS transistors. [0003] At present, in order to improve the electrical performance of MOS transistors, Backside Grinding Backside Metal (BGBM) technology has been applied to the manufacturing process of MOS transistors and has become a key link. This technology is to form a metal...

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Problems solved by technology

[0005] The object of the present invention is to provide a semiconductor structure, its forming method and testing method, to solve the problem of poor yield rate of MOS transistors in the prior art

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