Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Temperature compensated beam resonator

一种谐振器、微机电谐振器的技术，应用在电气元件、阻抗网络等方向，达到高频率稳定性的效果

Active Publication Date: 2017-08-01
TEKNOLOGIAN TUTKIMUSKESKUS VTT
View PDF9 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Currently, only a few practical low-TCF silicon resonator designs are available, some of which are disclosed in WO 2012 / 110708 and US8558643

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temperature compensated beam resonator
  • Temperature compensated beam resonator
  • Temperature compensated beam resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0067] Figure 1A A resonator comprising a single beam 10A, with length L and width W, fabricated on a (100) wafer is shown. Beam 10A is tilted at an angle Θ with respect to the [100] crystal direction. Depending on the desired resonant mode to be excited, the inclined beam 10A may be anchored to a surrounding support structure (not shown) from an anchor point at one of its longitudinal ends or midway between one or both longitudinal sides. Preferably, the anchoring occurs at one or more nodes or quasi-nodes of the resonant modes at the perimeter of the beam 10A.

[0068] A disadvantage of the resonator of Figure 1A is that it is asymmetrical with respect to the [100] direction, whereby spurious resonant modes may be generated in the beam along with the main resonant mode. These spurious modes may degrade the quality factor of the resonator and may even affect the TCF characteristics of the main resonant mode.

[0069] Figure 1B The resonator of , which avoids the disadva...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
frequency temperature coefficientaaaaaaaaaa
Login to View More

Abstract

The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm-3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Description

technical field [0001] The present invention relates to microelectromechanical resonators. In particular, the invention relates to tuning the temperature coefficient of frequency (TCF) of beam-containing resonators. Background technique [0002] The widely used quartz crystal based resonators can be replaced in many applications by micromechanical resonators, typically silicon based resonators. Silicon resonators can be made smaller than quartz resonators, and there are several standard fabrication methods for silicon resonators. However, silicon-based resonators pose a problem with large temperature drift of the resonant frequency. This drift is mainly due to the temperature dependence of the Young's modulus of silicon, such that the temperature coefficient of frequency (TCF) is about -30ppm / C. This causes the resonant frequency to fluctuate due to changes in ambient temperature. [0003] Regarding TCF, in practice, both linear behaviors (i.e., first-order behavior and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/24H03H3/007
CPCH03H3/0076H03H9/02448H03H9/2405H03H9/2447H03H2009/241
Inventor 安蒂·亚科拉帕努·派克米卡·普伦尼拉托马斯·彭萨拉
Owner TEKNOLOGIAN TUTKIMUSKESKUS VTT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com