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Electro-optical arbitrary waveform generator based on graphene grid silicon waveguide

An arbitrary waveform and silicon waveguide technology, applied in the direction of instruments, optics, nonlinear optics, etc., can solve the problems that cannot fully meet the needs of modulation speed, and achieve the effects of avoiding high loss, wide working bandwidth, and reducing costs

Inactive Publication Date: 2017-08-04
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] It should be noted that the current modulators all use spatial single-point modulation, which cannot fully meet the modulation speed requirements of current high-speed optical communication systems.

Method used

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  • Electro-optical arbitrary waveform generator based on graphene grid silicon waveguide
  • Electro-optical arbitrary waveform generator based on graphene grid silicon waveguide
  • Electro-optical arbitrary waveform generator based on graphene grid silicon waveguide

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Embodiment 1

[0063] The arbitrary waveform generator comprises a ridge silicon waveguide 1, a graphene grid layer 2, a positive electrode array 3 (positive electrode units 31, 32, 33, 34, 35, 36, 37, 38, 39, 310, 311, 312, 313, 315, 316, 317, 318, 319, 320, 321, 322, 323, 324, 325, 326, 327, 328, 329, 330), negative electrode array 4 (negative electrode unit 41, 42, 43, 44 ,45,46,47,48,49,410,411,412,413,414,415,416,417,418,419,420,421,422,423,424,425,426,427,428,429 , 430), flat substrate 5, hBN layer 6 ( figure 1 ). The combination method is: the ridge waveguide modulator structure uses silicon-on-insulator SOI as the base, several layers of graphene and hBN layers are inserted into the middle of the ridge waveguide, a layer of polysilicon is evaporated on the top layer, and the positive and negative electrode arrays are on both sides of the silicon waveguide and graphite Alkene layers are connected to form a modulation unit, and multiple unit modulators are arranged repeatedly to form...

Embodiment 2

[0065] The arbitrary waveform generator comprises a ridge silicon waveguide 1, a graphene grid layer 2, a positive electrode array 3 (positive electrode units 31, 32, 33, 34, 35, 36, 37, 38, 39, 310, 311, 312, 313, 315, 316, 317, 318, 319, 320, 321, 322, 323, 324, 325, 326, 327, 328, 329, 330), negative electrode array 4 (negative electrode unit 41, 42, 43, 44 ,45,46,47,48,49,410,411,412,413,414,415,416,417,418,419,420,421,422,423,424,425,426,427,428,429 , 430), flat substrate 5, hBN layer 6 ( figure 1 ). The combination method is: the ridge waveguide modulator structure uses silicon-on-insulator SOI as the base, several layers of graphene and hBN layers are inserted into the middle of the ridge waveguide, a layer of polysilicon is evaporated on the top layer, and the positive and negative electrode arrays are on both sides of the silicon waveguide and graphite Alkene layers are connected to form a modulation unit, and multiple unit modulators are arranged repeatedly to form...

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Abstract

The invention provides an electro-optical arbitrary waveform generator based on the graphene grid silicon waveguide, and relates to the field of arbitrary waveform generators. An insulator upper silicon SOI is used as the base for the base layer of a crestiform waveguide modulator, several layers of graphene and an hBN layer are inserted in the middle part of the crestiform waveguide, the top layer is vapor coated with a layer of polysilicon, the positive and negative electrodes are arrayed on two sides of the silicon waveguide and are connected with the graphene layers, to form a modulation unit, multiple units of modulators are repeatedly permuted. The required waveforms are edited into special electric signal arrays which change with the passing of time, the positive electrodes of each unit of the positive electrode array 3 and the positive electrodes of each unit of the negative electrode array 4 are respectively connected with both ends of each unit of the graphene grid layer 2 and are applied with the spacial electrical signal array. The crestiform waveguide is 600 nm in width, 250 nm in height, the graphene is double-layered, the unit is 300Mum in length, the spacing between adjacent units is 280Mum, the number of units is 30, and the hBN layer is 7 nm in thickness. The special cycle of the graphene grid layer 2 is in the dimension of a micron.

Description

technical field [0001] The invention belongs to the field of silicon-based devices for communication, in particular to an electro-optic arbitrary waveform generator. Background technique [0002] Arbitrary waveform generators are devices that generate controlled arbitrary waveforms. The electro-optical arbitrary waveform generator proposed by the present invention has potential application prospects in many fields, and meets the requirements of the next generation network for ultra-high-speed transmission rate and ultra-fast bandwidth: such as arbitrary waveform optical pulse OAWG can generate broadband microwave signals, such as suitable for communication Gaussian signals and waveforms with high energy efficiency; OAWG can provide complex all-optical vector modulation formats, such as QAM, QPSK, DPSK, DSB-SC, etc., to improve transmission spectral efficiency; OAWG can perform dispersion compensation on received signals to improve signal Quality; OAWG can perform terahertz ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/035
CPCG02F1/035
Inventor 裴丽白冰王吉张艳徐春霞
Owner BEIJING JIAOTONG UNIV
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