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IGBT module characteristic aging device

A technology for aging devices and module characteristics, applied in measuring devices, instruments, measuring electronics, etc., can solve the problems of high purchase cost and difficult to guarantee the reliability of IGBT products, and achieve low purchase cost, simple and clear circuit design, Practical effect

Pending Publication Date: 2017-08-08
YANGZHOU QIAOHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

IGBT modules in my country have always relied on imports, and the purchase cost is very high, but application companies have to buy them. The reason is that the IGBT components produced independently in my country do not have a matching, reliable, and low-cost aging equipment. It is difficult to guarantee the reliability of IGBT products

Method used

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  • IGBT module characteristic aging device
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  • IGBT module characteristic aging device

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Experimental program
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Embodiment Construction

[0029] Below in conjunction with accompanying drawing, the present invention is further described:

[0030] An IGBT module characteristic aging device, comprising a main control circuit unit 1, an electrical control distribution circuit unit 2, a high voltage generation circuit unit 3, a trigger circuit unit 4, an IGBT module group to be tested 5, and a reverse leakage current detection circuit unit 6 and the IGBT reverse leakage current test circuit formed by the fault display lamp unit 7; by the main control circuit unit 1, the electrical control distribution circuit unit 2, the IGBT module group 5 to be tested, and the trigger circuit unit 4 , a large current aging test circuit composed of a large current generating circuit unit 8, a current transmitter 9, a voltage transmitter 10 and a display circuit unit 11;

[0031] The main control circuit unit 1 is electrically connected to the high-voltage generating circuit unit 3 and the high-current generating circuit unit 8 throu...

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PUM

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Abstract

The invention discloses an IGBT module characteristic aging device, belongs to the technical field of IGBT aging equipment, and solves a problem that IGBT components autonomously produced in China do not have a matched, reliable and low-cost aging device, and that the reliability of produced IGBT products cannot be guaranteed. The IGBT module characteristic aging device mainly comprises an IGBT reverse leakage current test circuit and a heavy-current aging test circuit. The IGBT module characteristic aging device has important significance in the field of IGBT production. The low cost and high reliability of the IGBT module characteristic aging device create considerable economic benefits for the whole industry, and the IGBT module characteristic aging device is easy to manufacture and good in practicality, and can be widely used in the technical field of IGBT production.

Description

technical field [0001] The invention belongs to the technical field of IGBT aging equipment, and in particular relates to an IGBT module characteristic aging device. Background technique [0002] IGBT is an insulated gate bipolar transistor. It is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). It has both high input impedance and GTR of MOSFET. The advantages of low conduction voltage drop are two aspects. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. In order to save space, two or more IGBT components are generally integrated together. IGBT ...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 顾扣宏吴行竹吴鹰
Owner YANGZHOU QIAOHENG ELECTRONICS
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