Active matrix organic light emitting diode backplane and manufacturing method thereof

A light-emitting diode and active matrix technology, which is applied in the field of active matrix organic light-emitting diode backplane and its manufacturing, can solve the problems of preparation oxidation and complex preparation methods, etc.

Active Publication Date: 2019-09-24
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the embodiments of the present invention is to provide an active matrix organic light-emitting diode backplane and its manufacturing method, so as to overcome the defects of complex and serious oxidation in the existing preparation method

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  • Active matrix organic light emitting diode backplane and manufacturing method thereof
  • Active matrix organic light emitting diode backplane and manufacturing method thereof
  • Active matrix organic light emitting diode backplane and manufacturing method thereof

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preparation example Construction

[0063] Such as figure 1 The preparation method of the top gate oxide type AMOLED backplane includes: forming a light-shielding layer pattern on the substrate through the first patterning process; forming a buffer layer and an oxide active layer pattern through the second patterning process; The patterning process forms the gate insulating layer and the gate electrode pattern; the interlayer dielectric layer and the via holes on it are formed through the fourth patterning process; the source and drain electrode patterns are formed through the fifth patterning process, and the source and drain electrodes pass through the interlayer dielectric layer. The opened via holes are connected to the oxide active layer and the light-shielding layer; the color photoresist layer pattern is formed through the sixth patterning process; the planarization layer and the via holes on it are formed through the seventh patterning process; through the eighth patterning process The process forms a tr...

no. 1 example

[0092] Figure 3-10 It is a schematic diagram of preparing an AMOLED backplane according to the first embodiment of the present invention. The AMOLED backplane of this embodiment is based on the COA low-reflection color display solution. The following will combine Figure 3-10 The preparation method of the AMOLED backplane in this embodiment is described in detail. The "patterning process" mentioned in this embodiment includes depositing a film layer, coating photoresist, mask exposure, developing, etching, and stripping photoresist And other treatment, is the existing mature preparation technology. Deposition can use known processes such as sputtering, evaporation, and chemical vapor deposition, coating can use known coating processes, and etching can use known methods, which are not specifically limited here.

[0093] In the first patterning process, a light-shielding layer pattern is formed on the substrate through a single-tone mask patterning process. Forming the ligh...

no. 2 example

[0117] Based on the inventive concept of the first embodiment, this embodiment provides an AMOLED backplane, which is a top gate type oxide thin film transistor with a non-coplanar structure. The upper and lower sides of the source layer. Such as Figure 10 As shown, the top gate oxide AMOLED backplane in this embodiment includes:

[0118] base 10;

[0119] A light-shielding layer 11 disposed on the substrate 10;

[0120] A buffer layer 12 covering the light-shielding layer 11;

[0121] A source-drain electrode 17 disposed on the buffer layer 12;

[0122] An oxide active layer 13 covering the source and drain electrodes 17, the active layer 13 is connected to the light shielding layer 11 through a first via hole;

[0123] The gate insulating layer 14, gate electrode 15, color photoresist layer 19 and flat layer 20 arranged on the oxide active layer 13; 20 located in the light-emitting area of ​​the sub-pixel;

[0124]A transparent anode 21 arranged in the light-emitting...

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Abstract

The invention provides an active matrix organic light emitting diode backplane and a manufacturing method thereof. The manufacturing method includes: forming source-drain electrodes and first via hole patterns through a patterning process on a substrate formed with a light-shielding layer pattern and a buffer layer; The source layer, the gate insulating layer and the second via hole pattern, the oxide active layer is connected to the light shielding layer through the first via hole; the gate electrode and the transparent anode pattern are sequentially formed, the gate electrode is covered by a transparent conductive film, and the transparent anode passes through the second via hole. The via holes are connected to the source-drain electrodes. Compared with the existing preparation process, the present invention can be prepared through at most eight patterning processes, which not only reduces the patterning process, but also effectively avoids the oxidation of Cu metal during the preparation process.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an active matrix organic light emitting diode backplane and a manufacturing method thereof. Background technique [0002] In the field of display technology, liquid crystal (Liquid Crystal Display, LCD) display devices and organic light emitting diode (Organic Light Emitting Diode, OLED) display devices have gradually replaced CRT displays. Because OLED display devices have the advantages of self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, near 180° viewing angle, wide operating temperature range, etc., and can realize large-area full-color display, it is expected to become a successor The next-generation flat-panel display technology after the LCD display technology is one of the most concerned technologies in the flat-panel display technology. An active matrix organic light emitting diode (Active Matrix Organ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32H01L51/56H01L51/50
CPCH10K59/121H10K59/12H10K30/865H10K71/00H10K59/10H10K59/1201H10K59/123H10K59/1213H10K59/126H10K50/15H10K50/816
Inventor 刘威
Owner BOE TECH GRP CO LTD
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