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Apparatus and method for controlling thickness of crystalline sheet grown on melt

A technology of crystal sheet and melt, applied in the field of thickness devices, can solve the problem of unusable application and other problems

Inactive Publication Date: 2017-08-18
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If a single wafer is crystallized to have an initial thickness of 2 mm and an initial thickness variation of 5% (or 100 μm) near the crystallizer, without correction for this initial thickness variation, the And after thinning the tape to 200 μm, a thickness change of 100 μm would now constitute a 50% change in thickness, which could render the tape unusable for its intended application

Method used

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  • Apparatus and method for controlling thickness of crystalline sheet grown on melt
  • Apparatus and method for controlling thickness of crystalline sheet grown on melt
  • Apparatus and method for controlling thickness of crystalline sheet grown on melt

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Embodiment Construction

[0037] Embodiments of the invention will now be described more fully hereinafter with reference to the accompanying drawings in which certain embodiments are shown. However, the inventive subject matter may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the subject matter to those skilled in the art. In the drawings, like numbers refer to like elements throughout.

[0038]Embodiments of the present invention provide several advantages to the growth of crystalline sheets not found in conventional techniques. For example, embodiments provide a remelt heater whose remelt heat profile can be fine-tuned in situ to match thickness non-uniformities that may arise when crystalline flakes crystallize on the melt surface. The sheet thickness can then be selectively reduced by applying the remel...

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Abstract

An apparatus may include a crucible configured to contain the melt, the melt having an exposed surface separated from a floor of the crucible by a first distance, a housing comprising a material that is non-contaminating to the melt, the housing comprising a plurality of sidewalls and a top that are configured to contact the melt, and a plurality of heating elements isolated from the melt and disposed along a transverse direction perpendicular to a pulling direction of the crystalline sheet, the plurality of heating elements being individually powered, wherein the plurality of heating elements are disposed at a second set of distances from the exposed surface of the melt that are less than the first distance, and wherein the plurality of heating elements are configured to vary a heat flux profile along the transverse direction when power is supplied individually to the plurality of heating elements.

Description

technical field [0001] Embodiments of the present invention relate to single crystal substrate formation, and more particularly, to apparatus and techniques for controlling the thickness of crystalline material grown from a melt. Background technique [0002] Currently, techniques have been developed to grow monocrystalline (single crystal) sheets from a melt of a given material, such as silicon. This is achieved by crystallizing a thin solid layer of a given material at a given location on the surface of a melt composed of the given material and pulling the thin solid layer in a pulling direction. Ribbons of single crystal material may form crystallized regions where one end of the ribbon remains fixed at a given location or where crystallization occurs when the single crystal material is pulled in a given direction. This crystalline region may define a crystalline front (front) between the single wafer and the melt, which is delimited by small crystal facets formed at the...

Claims

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Application Information

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IPC IPC(8): C30B13/28C30B29/06
CPCC30B11/001C30B11/003C30B11/006C30B15/002C30B15/06C30B15/14C30B15/22C30B29/06Y10T117/1044Y10T117/1048Y10T117/1068C30B15/26C30B29/64
Inventor 彼德·L·凯勒曼菲德梨克·M·卡尔森大卫·莫雷尔布莱恩·梅克英特许南帝斯·德塞
Owner VARIAN SEMICON EQUIP ASSOC INC