Chemical-mechanical grinding machine table, temperature control system and temperature control method of temperature control system

Abstract

The invention provides a chemical-mechanical grinding machine table, a temperature control system and a temperature control method of the temperature control system. The temperature control system comprises a collecting unit, a control unit and an executing unit which are sequentially in communication connection. The temperature control method comprises the steps that the collecting unit collects the temperature information of a grinding pad in the chemical-mechanical grinding process; and the control unit controls the executing unit to cool the grinding pad according to the temperature information of the grinding pad so that the temperature of the grinding pad can be kept within the preset range. The chemical-mechanical grinding machine table comprises the grinding pad and the temperature control system. The collecting unit is used for obtaining the temperature information of the grinding pad in the grinding process, the control unit controls the executing unit to cool the grinding pad according to the temperature information, accordingly, the temperature of the grinding pad is controlled, the temperature of the grinding pad in the chemical-chemical grinding process can be stabilized within a certain value range, and accordingly the wafer grinding effect is ensured.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a temperature control system, a control method thereof, and a chemical mechanical polishing machine. Background technique [0002] In the field of semiconductor manufacturing, the planarization of the wafer surface is an important process. In the process of exposing the wafer, the flatter the wafer surface is, the more effectively it can avoid light scattering, so as to realize the effective transfer of precise images. . [0003] The planarization treatment of the wafer surface mainly includes a spin-on-glass method (Spin On Glass, SOG for short) and a chemical mechanical polishing method (Chemical Mechanical Polish, CMP for short). The spin-on glass method can meet the general process requirements, but after the semiconductor manufacturing process enters the millimeter level, the spin-on glass method can no longer meet the production process requirements. At present,...

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Problems solved by technology

However, when the temperature of the polishing pad is lower than point A of 30°C or higher than point B of 75°C, the chemical reaction characteristics between the polishing liquid and the wafer surface will be deteriorated, thereby affecting the planarization of the wafer surface

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