Defect inspection method and defect inspection device for wide-gap semiconductor substrates

A defect inspection, semiconductor technology, applied in the direction of semiconductor/solid-state device testing/measurement, optical testing flaw/defect, fluorescence/phosphorescence, etc.

Active Publication Date: 2017-08-29
TORAY ENG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, SiC epitaxial substrates still have a large number of defect crystals, so

Method used

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  • Defect inspection method and defect inspection device for wide-gap semiconductor substrates
  • Defect inspection method and defect inspection device for wide-gap semiconductor substrates
  • Defect inspection method and defect inspection device for wide-gap semiconductor substrates

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Embodiment Construction

[0103]

[0104] Hereinafter, the first aspect for carrying out the present invention will be described.

[0105] The defect inspection method of the present invention is a method of inspecting defects generated in a wide band gap semiconductor substrate,

[0106] The excitation light is irradiated toward the wide-bandgap semiconductor substrate,

[0107] The photoluminescence in the visible light region emitted by the excitation light irradiated on the wide-bandgap semiconductor substrate was photographed,

[0108] In the captured image including photoluminescence in the visible light region, the intensity of the light emitted from the portion of the wide-bandgap semiconductor substrate including the defect to be inspected is related to the intensity of the light emitted from the wide-bandgap semiconductor substrate that does not include the defect. The difference in the intensity of light emitted from the defect site to be inspected is used to inspect the defect generated in...

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Abstract

The purpose of the present invention is to provide a method and a defect inspection device for quickly and reliably inspecting wide-gap semiconductor substrates for defects, despite a device configuration that is simple. Specifically, there are provided a method or a defect inspection device for inspecting a wide-gap semiconductor substrate for defects, characterized in that excitation light is irradiated towards the wide-gap semiconductor substrate; photoluminescence in the visible light region emitted due to irradiation of the wide-gap semiconductor substrate by the excitation light is photographed; and an inspection of defects occurring in the wide-gap semiconductor substrate is carried out on the basis of the difference between the intensity of light emitted from defect-free regions of the wide-gap semiconductor substrate and the intensity of light emitted from defect regions of the wide-gap semiconductor substrate, in the photographed image which includes the photoluminescence in the visible light region.

Description

technical field [0001] The present invention relates to a method and apparatus for inspecting defects arising in epitaxial layers formed on a wide band gap semiconductor substrate or in the material itself constituting the wide band gap semiconductor substrate. Background technique [0002] A structure in which an epitaxial layer is formed on a SiC substrate (so-called SiC epitaxial substrate) is a wide-bandgap semiconductor, and is a power semiconductor device attracting attention with the spread of solar power generation, hybrid vehicles, and electric vehicles. However, the SiC epitaxial substrate still has a large number of defective crystals, so it is necessary to conduct all inspections in order to use it as a power semiconductor device. [0003] Among them, a crystal defect called a basal plane dislocation (dislocation) is a cause of the spread of a stacking fault defect, which is a cause of a decrease in the forward characteristic of a pn junction diode. Therefore, a...

Claims

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Application Information

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IPC IPC(8): G01N21/64G01N21/88H01L21/66
CPCG01N21/64G01N21/88
Inventor 村田浩之大槻真左文
Owner TORAY ENG CO LTD
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