Conductive silver paste applied to preparation process of solar cell

A technology of solar cells and conductive silver paste, applied in the field of chemical materials, can solve the problems of line expansion, stress damage, thermal expansion coefficient mismatch, etc., and achieve the effect of avoiding line expansion, thermal expansion coefficient matching, and avoiding damage

Inactive Publication Date: 2017-09-05
EXOJET TECH CORP
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the known conductive paste used for solar cells is prone to stress failure or linear expansion after sintering due to its thermal expansion coefficient mismatch with the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Conductive silver paste applied to preparation process of solar cell
  • Conductive silver paste applied to preparation process of solar cell
  • Conductive silver paste applied to preparation process of solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Relating to the detailed description and technical content of the present invention, it is now described as follows in conjunction with the accompanying drawings:

[0029] The invention provides a conductive silver paste used in the preparation process of solar cells, comprising an organic carrier, a conductive material, a glass medium and a silver precursor, the conductive material, the glass medium and the silver precursor are dispersed separately in the organic carrier. In the present invention, the type of the silver precursor can be silver monoxide (AgO), silver oxide (Ag 2 O), silver nitrate (AgNO 3 ), silver iodide (AgI), silver bromide (AgBr), silver chloride (AgCl), silver fluoride (AgF) or a combination of the above, and the weight percentage of the silver precursor in the conductive silver paste is between 0.01wt .% to 10wt.%. The present invention utilizes adding the silver precursor, when the conductive silver paste containing the silver precursor is sin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A conductive silver paste used in the preparation process of solar cells, comprising an organic carrier, a conductive material, a glass medium and a silver precursor, the conductive material, the glass medium and the silver precursor are respectively dispersed in the organic In the carrier, the weight percentage of the silver precursor in the conductive silver paste is between 0.01wt.% and 10wt.% and is selected from silver monoxide, silver oxide, silver nitrate, silver iodide, silver bromide, chlorine The group consisting of silver chloride and silver fluoride. Through the matching of the silver precursor, the organic carrier, the conductive material and the glass medium and the adjustment of the weight percentage, the shrinkage rate during electrode formation can be adjusted, the diffusion of the conductive silver paste can be avoided, and the preparation process is improved. Rate.

Description

technical field [0001] The invention relates to a chemical material used in solar cells, in particular to a conductive silver paste used in the preparation process of solar cells. Background technique [0002] The basic structure of a traditional solar cell is to form a solar cell substrate by joining a p-type semiconductor and an n-type semiconductor, and a p-n junction (p-n junction) will be formed between the p-type semiconductor and the n-type semiconductor. When sunlight is irradiated, the solar cell will generate an electron-hole pair (hole-electron pair) at the p-n junction. Since the p-type semiconductor has a higher hole density; and the n-type semiconductor has a higher electron density, so at the p-n junction, the electrons of the electron-hole pair will go to the n-type semiconductor Move, and the holes of the electron-hole pair will move to the p-type semiconductor, and then generate current, and finally use the conductive electrode to collect the current for u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01B13/00H01L31/0224
CPCH01B1/22H01B13/00H01L31/0224
Inventor 彭治伟陈彦彰柯宗羲曹哲彰赖一凡
Owner EXOJET TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products