A high resistivity, low b-value negative temperature coefficient thermosensitive material and preparation method thereof
A technology with negative temperature coefficient and high resistivity, which is applied to resistors with negative temperature coefficient, resistors, non-adjustable metal resistors, etc., to achieve the effect of simple process, excellent electrical conductivity and good compactness
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Embodiment 1
[0022] (1) Formulation: NiO, CuO, Fe 2 o 3 As raw material, the purity is industrial grade, take NiO:CuO:Fe 2 o 3 =28:55:17 (wt%)+5% (additive)=25:55:20 (wt%)+5% (additive)=22:55:23 (wt%)+5% (additive)=18 : 55: 27 (wt%) + 5% (additive); the additive is: Cr 2 o 3 : CaO: ZrO: SiC=20:15:30:35wt%, 24 hours ball milling;
[0023] (2) Ball mill the above proportioned ingredients for 24 hours, material: water: ball = 1.0:1.2:1.5;
[0024] (3) Granulation: Add 24% wt of PVA glue solution with a concentration of 15% to the powder, manually granulate, and pass through a 200-300 mesh sieve;
[0025] (4) Forming: Forming Ф5.4 (mm) × 1.2 (mm) green sheet, the pressing density is 3.2g / cm 3 ;
[0026] (5) Put the formed blank into a ceramic bowl and sinter at a high temperature of 1080°C for 3 hours. The sintering curve is:
[0027] From room temperature to 500°C, the heating rate is 0.5°C / min,
[0028] 500℃~500℃ constant temperature for 2 hours,
[0029] 500℃~800℃, the heating r...
Embodiment 2
[0039] The main formula is NiO: CuO: Fe 2 o 3 =23:52:25 (wt%), the amount of additives was taken as 1.0, 3.0, 5.0, 7.0, 9.0wt%, respectively, and the samples were made according to the process of Example 1. The test results are as follows (statistics based on 100 chips ):
[0040]
[0041] The results show that with the increase of the additive amount, the resistivity and B value change little, and the consistency is best centered around 4% additive, and the consistency becomes larger with the increase or decrease of the additive.
Embodiment 3
[0043] The formula takes NiO, CuO, Fe 2 o 3 =23:52:25 (wt%), the amount of additives is 5wt%, and the green sheet is made according to the process of Example 1, and sintered at different sintering temperatures. The measurement results of the samples are as follows (statistics based on 100 chips):
[0044]
[0045] The results show that as the sintering temperature increases, the resistivity decreases and the B value decreases accordingly.
[0046] The material formula and preparation technology of the present invention can be produced in batches, and the performance of the material meets various parameters required by the temperature sensor. This material has the characteristics of good compactness, high stability, and excellent electrical conductivity, and is an important material required by the sensor. .
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