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Temperature compensation circuit for radio frequency power amplifier

A temperature compensation circuit, radio frequency power technology, applied in power amplifiers, radio frequency amplifiers, improving amplifiers to reduce temperature/power supply voltage changes, etc. Weakening effects, addressing the effects of amplifying linear variation, improving stability and work efficiency

Active Publication Date: 2017-09-08
GUANGZHOU HUIZHI MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the embodiment of the present invention expects to provide a temperature compensation circuit of a radio frequency power amplifier, which can solve the problem that the DC operating point of the radio frequency power amplifier changes due to the influence of temperature, and cannot work in the linear amplification region, resulting in poor linearity.

Method used

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  • Temperature compensation circuit for radio frequency power amplifier
  • Temperature compensation circuit for radio frequency power amplifier
  • Temperature compensation circuit for radio frequency power amplifier

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Effect test

Embodiment 1

[0062] In Embodiment 1 of the present invention, the specific composition and structure of the temperature compensation circuit of the RF power amplifier is as follows figure 2 As shown, the temperature compensation circuit includes a temperature control circuit 201 and a negative feedback circuit 202 .

[0063] The temperature control circuit 201 includes a temperature control power supply, a steady state power supply, a clamp circuit, a filter circuit and an adjustable resistance circuit.

[0064] The temperature-controlled power supply is connected to the adjustable resistance circuit through the first node, and is used to provide the adjustable resistance circuit with an electrical signal that changes with temperature; the electrical signal of the temperature-controlled power supply is proportional to the absolute temperature Proportional.

[0065] The steady-state power supply is connected to the adjustable resistance circuit through the first node, and is used to provi...

Embodiment 2

[0102] In Embodiment 2 of the present invention, the specific composition and structure of the temperature compensation circuit of the RF power amplifier is as follows Figure 9As shown, the temperature compensation circuit 901 includes a temperature control circuit 901a and a negative feedback circuit 901b. The specific composition and structure of the temperature control circuit 901a is the same as that of the temperature control circuit 201 in Embodiment 1, which will not be repeated here.

[0103] The negative feedback circuit 901b includes an inverter group circuit, a transistor group circuit, a parallel resistance circuit, a first capacitor and a second capacitor;

[0104] The inverter group circuit includes m inverters, the output end of each inverter is connected to the input end of each transistor group in the transistor group circuit, and the input end of each inverter is connected to the The first nodes are connected to transmit the second electrical signal to the t...

Embodiment 3

[0120] In the third embodiment of the present invention, the specific composition and structure of the radio frequency power amplifier circuit is as follows Figure 10 As shown, the temperature compensation circuit 1001 and the bias circuit 1003 may be implemented in any one of the first and second embodiments, which will not be repeated here.

[0121] The radio frequency power amplifier 1003 includes n amplifying transistors, the n amplifying transistors are connected in series, and the input terminal of each transistor is connected to the second node, and the n transistors can be represented as M21, M22, ..., M2k, where k is a positive integer greater than 1, the source of M2k is connected to the third node, the drain of M21 is grounded, and the power gain of the RF power amplifier is the total gain after the amplifier transistors are connected in series.

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Abstract

The invention discloses a temperature compensation circuit for a radio frequency power amplifier. The temperature compensation circuit comprises a temperature control circuit and a negative feedback circuit, wherein the temperature control circuit is used for generating a first electric signal corresponding to a temperature and regulating a second electric signal of a first node according to the first electric signal; and the negative feedback circuit is used for providing a negative feedback signal to the radio frequency power amplifier by a second node on the basis of the second electric signal, wherein the second electric signal is used for changing a resistance value of the negative feedback circuit so as to regulate the negative feedback signal related to the resistance value; and the negative feedback signal is used for being input into the radio frequency power amplifier to change a gain of the radio frequency power amplifier. Meanwhile, the invention further discloses the radio frequency power amplifier.

Description

technical field [0001] The invention relates to radio frequency power amplification technology in the electronic technical field, in particular to a temperature compensation circuit of a radio frequency power amplifier. Background technique [0002] In mobile communication systems, the efficiency and linearity of RF power amplifiers directly affect the energy consumption and quality of the communication process. Terminal equipment needs to work normally in different scenarios and regions, which requires that the operating temperature range of RF power amplifiers can cover at least -25°C to 85°C, that is, the performance of RF power amplifiers can meet mobile Communication protocol requirements for power consumption and linearity. However, due to the temperature characteristics of the transistor, the operating point of the RF power amplifier will change. Generally speaking, when the temperature rises, the gain of the RF power amplifier decreases; when the temperature decreas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F1/32H03F3/193H03F3/21H03G3/30
CPCH03F1/301H03F1/3205H03F3/193H03F3/21H03G3/3036H03F2200/447H03F2200/451H03F3/245H03F1/342H03G3/3042Y02D30/70H03F2200/129H04B1/40
Inventor 苏强徐柏鸣奕江涛
Owner GUANGZHOU HUIZHI MICROELECTRONICS
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