Thin film transistor and manufacturing method thereof and display device

Abstract

The invention relates to a thin film transistor and a manufacturing method thereof and a display device, and is used for solving the problems in the present flexible display screen that the metal wires of the source and drain layer are broken because of fracturing in the bending process due to high thickness of the interlayer dielectric layer. The thin film transistor comprises an underlying substrate, an active layer and the source and drain layer which are arranged on the underlying substrate and an insulating layer which is arranged between the active layer and the source and drain layer. The source and drain layer is connected with the active layer through the through holes on the insulating layer. The material of the insulating layer includes hydrogen storage material. According to the thin film transistor, the insulating layer manufactured by the hydrogen storage material is arranged between the active layer and the source and drain layer, and the hydrogen atoms stored in the insulating layer can be provided for the active layer so that subsequent manufacturing of the interlayer dielectric layer can be omitted. Meanwhile, the flexible insulating layer has higher flexibility in comparison with the interlayer dielectric layer manufactured by inorganic material and is not liable to break in bending so that the yield rate of the product can be enhanced.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to a thin film transistor, a manufacturing method thereof and a display device. Background technique [0002] Traditional displays are flat-panel displays, which cannot be bent at will. The future trend is to present a large amount of information on flexible bodies, that is, to display on flexible displays, that is, to realize flexible displays. The official definition of a flexible display is a display device whose display screen and module can be mechanically bent in any step of substrate packaging, production, storage, use, operation, process connection, handling, and transportation. In the existing LTPS (Low Temperature Poly-silicon, low temperature polysilicon) backplane preparation process, the interlayer dielectric layer arranged between the gate and the active layer in the thin film transistor, because it generally uses the inorganic material SiO-SiNx The dou...

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Problems solved by technology

[0004] The object of the present invention is to provide a thin film transistor, its manufacturing method and display device, which are used to solve the problem that in the existing flexible display screen, the thickness of the i

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