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Infrared detector scribing method

An infrared detector and scribing technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, sustainable manufacturing/processing, etc., can solve the problem of direct splitting of infrared detector devices, edge chipping cracks, blade stress deformation, etc. question

Inactive Publication Date: 2017-09-19
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, there is generally only one way of scribing infrared focal plane detectors (abbreviated as infrared detectors), that is, to cut through the infrared detector with a knife, but during the scribing process, the blade directly touches the supporting sheet (silicon wafer) and Paraffin wax, different materials, different hardness, will cause the blade to deform under force during cutting, overload the blade, and easily cause edge chipping, cracks, etc.
Especially for linear devices and ultra-long linear devices, when the subsequent back-subtraction process is reduced to a few microns, the chipping cracks on the edge of the infrared detector are likely to cause direct cracking of the infrared detector device

Method used

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Embodiment Construction

[0015] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0016] In order to completely solve the problem of edge chipping and cracks on the back of the infrared detector device and improve the yield of the infrared detector device, the present invention provides a scribing method for the infrared detector. The invention is described in further detail. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the pres...

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Abstract

The invention discloses an infrared detector scribing method comprising the following steps: pasting an infrared detector on a support sheet with the front side facing upwards, scribing the infrared detector so as to form a scribing groove, wherein the scribing groove depth is smaller than the thickness of the infrared detector; pasting the scribed infrared detector on a substrate, wherein the front side of the infrared detector faces downwards; polishing the infrared detector in a direction vertical to the scribing groove, thus exposing the scribing groove. When the whole scribing process of the infrared detector is finished by the method, the backside edge of the infrared detector is smooth with no edge-breaking, corner-breaking or cracks, thus greatly improving the device yield rate.

Description

technical field [0001] The invention relates to the technical field of infrared focal plane detectors, in particular to a method for scribing infrared detectors. Background technique [0002] At present, there is generally only one way of scribing infrared focal plane detectors (abbreviated as infrared detectors), that is, to cut through the infrared detector with a knife, but during the scribing process, the blade directly touches the supporting sheet (silicon wafer) and Paraffin wax, different materials, different hardness, will cause the blade to deform under force during cutting, overload the blade, and easily cause edge chipping and cracks. Especially for linear devices and ultra-long linear devices, chipping and chipping cracks on the edge of the infrared detector are likely to cause direct cracking of the infrared detector device during the subsequent back-subtraction process to a few microns. Contents of the invention [0003] In view of the above problems, the pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/78
CPCH01L21/78H01L31/1876Y02P70/50
Inventor 李家发曹立雅谢珩东海杰王成刚
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP