Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for recovering hexachlorodisilane from chlorosilane mixtures in process offgas streams

A technology of hexachlorodisilane and exhaust gas flow, which is applied in the direction of silicon compounds, silicon halide compounds, halosilanes, etc., can solve the problems of unfavorable high-reactivity solid substances and difficulties in eliminating high-boiling point components, and achieve low technical cost and Energy cost, low equipment complexity, effect of increased yield

Inactive Publication Date: 2017-09-26
SILICON PROD BITTERFELD GMBH & CO KG
View PDF9 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Pure hydrolysis of this component more disadvantageously leads to highly reactive solid substances
thus making the elimination of this high boiling point component difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for recovering hexachlorodisilane from chlorosilane mixtures in process offgas streams
  • Method for recovering hexachlorodisilane from chlorosilane mixtures in process offgas streams
  • Method for recovering hexachlorodisilane from chlorosilane mixtures in process offgas streams

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Embodiment 1 (comparative example)

[0051] 767.0 g of a chlorosilane mixture, corresponding to the high-boiling fraction of the distillation of the silicon production off-gas, were isolated by distillation. The fractions listed below were obtained. The base solution was not further tested.

[0052] Table 1. Composition profile of starting mixtures and fractions of comparative examples (TCS=trichlorosilane, STC=silicon tetrachloride, TCDS=tetrachlorodisilane, PCDS=pentachlorodisilane, HCDS=hexachlorodisilane)

[0053]

Embodiment 2

[0054] Embodiment 2 (according to figure 1 , response 5)

[0055] 0.4 g of the catalyst Amberlyst was mixed into 303.3 g of the chlorosilane mixture in a three-necked flask at 20 °C Composition was re-determined after one week (Table 2). The catalyst was filtered off and the mixture was separated by distillation. Three fractions were extracted. The third fraction or bottoms contains other higher boiling silicon compounds in addition to hexachlorodisilane.

[0056] Table 2. Composition profile of mixtures and fractions of Example 1 (TCS=trichlorosilane, STC=silicon tetrachloride, TCDS=tetrachlorodisilane, PCDS=pentachlorodisilane, HCDS=hexachlorodisilane, HSS = higher boiling silicon compounds). Composition was determined by NMR spectroscopy.

[0057]

Embodiment 3

[0058] Embodiment 3 (according to figure 1 , response 5)

[0059] In a three-necked flask at 20°C, 20.5 g of Amberlyst Mixed with 1352.3 grams (about 900 ml) of the chlorosilane mixture. The mixture was examined by NMR spectroscopy after one week. The catalyst was filtered off and the mixture was separated by distillation. 232.7 g of hexachlorodisilane were obtained (Table 3).

[0060] Table 3. Compositional profile of the mixture of Example 2 (TCS = trichlorosilane, STC = silicon tetrachloride, TCDS = tetrachlorodisilane, PCDS = pentachlorodisilane, HCDS = hexachlorodisilane, HSS = higher boiling point silicon compounds). Composition was determined by NMR spectroscopy.

[0061]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention pertains to a method for recovering hexachlorodisilane from mixtures, present within process offgas streams, of chorosilanes of the general formula SixHyCl2x+2-y, where x = 1 and y = 0 - 3 and x = 2 and y = 0 - 5. The problem addressed by the present invention is therefore that of providing a method to allow high-yield isolation of the hexachlorodisilane from the aforesaid chlorosilane mixtures arising in the thermal reaction of hydrogen with monosilanes of the general formula SixHyCl2x+2-y, where x is 1 and y is 0 - 2. The problem is solved by a method for recovering hexachlorodisilane from mixtures, present within process offgas streams, of chorosilanes of the general formula SixHyCl2x+2-y, where x = 1 and y = 0 - 3 and x = 2 and y = 0 - 5, which is characterized in that the offgas streams or fractions thereof are converted to the liquid phase and then the partially hydrogenated chlorodisilanes of the general formula SixHyCl2x-2y-1 (x = 2, y = 1 - 5) that are in the chlorosilane mixture are additionally reacted catalytically to hexachlorodisilane, which is isolated from the resulting mixture by distillation.

Description

technical field [0001] The present invention relates to the general formula Si contained in the process off-gas stream x h y Cl 2x+2-y Process for obtaining hexachlorodisilane from mixtures of chlorosilanes in which x=1 and y=0-3 and x=2 and y=0-5. Background technique [0002] The process waste stream contains, in addition to the general formula Si x h y Cl 2x+2-y Chlorodisilanes where x=1 and y=0–3 may also contain significant proportions of the general formula Si x h y Cl 2x+2-y Partially hydrogenated chlorodisilanes where x = 2 and y = 1–5, and small proportions of higher boiling silicon compounds and in the reaction with hydrogen the general formula Si x h y Cl 2x+2-y Chlorosilanes where x=1 and y=0-2. [0003] process, such as by the general formula Si x h y Cl 2x+2-y Monosilane chemical vapor deposition of silicon where x can be equal to 1 and y can be equal to 0–2, such as in chemical vapor deposition of the Siemens method, and in other CVD processes us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/107
CPCC01B33/10773C01B33/10778C01B33/107B01J31/0237B01J31/0239
Inventor M·施莱M·卡茨F·沙夫
Owner SILICON PROD BITTERFELD GMBH & CO KG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com