Method for improving crystal edge defect in photoresist coating process

Abstract

The invention provides a method for improving a crystal edge defect in a photoresist coating process. The method comprises the steps of carrying out photoresist coating at a coating rotating speed and forming a photoresist coating with a preset thickness on the upper surface of a to-be-treated wafer; carrying out multi-stage main rotating speed treatment on the photoresist coating, wherein the multi-stage main rotating speed treatment comprises first rotating speed treatment and second rotating speed treatment of which the rotating speed is less than a first rotating speed; and keeping the photoresist coating moist, wherein the second rotating speed treatment comprises washing treatment on the edge of the wafer at the first stage before membrane stabilization to moisten the edge of the wafer and to remove the part, overflowing to the edge of the wafer, of the photoresist coating after coating, and a membrane thickness stabilization treatment at a second stage: washing treatment on the edge of the wafer after membrane stabilization to remove the part, diffusing to the edge of the wafer, of the photoresist coating and spin drying. According to the method, through improvement of the technological processes of treatment and cleaning nozzle equipment, the photoresist on the edge of the wafer in the photoresist coating process can be effectively removed and the product yield is increased by 1-2%.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation technology, in particular to a method for improving crystal edge defects in the photoresist coating process. Background technique [0002] In the semiconductor manufacturing process, the photolithography process has always been considered the most critical step in the manufacture of integrated circuits. It needs to be used many times throughout the process. Its stability, reliability and process yield have a great impact on product quality and yield. Rates and costs have an important impact. The photolithography process is a complex process, the essence of which is to copy the temporary circuit structure in the form of graphics to the wafer that will be etched and ion-implanted later: first, a thin layer of photoresist is formed on the wafer using a glue coater , and then irradiate the light through a mask plate on the photoresist thin layer to make it exposed to the second dete...

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of the prior art, the purpose of the present invention is to provide a method for improving crystal edge defects in the photoresist coating process, which is used to solve the problem that the photoresist at the edge of the wafer is difficult to remove in the prior art

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