25 results about "Mesocrystal" patented technology

The invention provides a crystal growth device and a crystal growth method, and solves the technical problems of low wafer utilization rate, low crystal growth speed, low efficiency, poor uniformity and the like in the existing chip manufacturing process. According to the invention, a traditional cylindrical ampoule structure is abandoned, and the annular ampoule design is innovatively adopted, so that the crystal grows into an inner hollow cylinder shape which is highly matched with the specification of a target wafer; the heater is arranged on the inner side of the ampoule, a traditional outer side heating mode is replaced, and heat is intensively acted on crystals in cooperation with an adjusting center of a heat preservation material during crystal growth, so that heat loss is reduced; the periphery of the heater is made of heat insulation materials, heat radiation leakage is effectively restrained, meanwhile, the ampoule supporting structure is adjusted, and the whole device is simple, low in cost and light in weight.

A method for growing single crystals, in particular silicon carbide single crystals, uses a device including a crucible, the crucible defining an outer surface and delimiting a receptacle having an axial extent between a bottom portion and an opening portion. The receptacle is designed for crystal growth and at least one seed crystal layer is located in the opening portion, the seed crystal layer being weighed down by a weighting mass at a side remote from the receptacle and being fixed, in particular exclusively, by the weight force of the weighting mass in its position against at least one holding portion located in the opening portion.

The invention discloses a wafer positioning device and method in back cleaning, and relates to the technical field of semiconductor chip packaging in IC manufacturing. The MEMS light receiving chip is attached to the substrate, and an MEMS light receiving chip light sensing area is arranged in the middle area of the upper surface of the MEMS light receiving chip; the MEMS light emitting chip is arranged above the MEMS light receiving chip in parallel, an MEMS light emitting chip light sensing area is arranged in the middle area of the lower surface of the MEMS light emitting chip, and the MEMS light emitting chip light sensing area and the MEMS light receiving chip light sensing area are arranged in a face-to-face mounting mode; and the at least two copper columns are arranged between the MEMS light receiving chip and the MEMS light emitting chip. Redundant structure materials and a multi-layer pressing process are replaced and omitted through copper column connection between the MEMS light receiving chip and the MEMS light emitting chip, and meanwhile the product size is reduced.

The embodiment of the invention discloses a crystal oscillator, device and method for a single particle test. In a specific implementation mode, the crystal oscillator comprises a to-be-radiated chip, a differential chip, a quartz oscillator, a first base and a second base, the to-be-radiated chip is bonded in the cavity of the first base through a conductive adhesive, and the first base exposes the to-be-radiated chip; the differential chip is electrically connected with each port in the cavity of the first base through gold wire bonding; the quartz oscillator is bonded on a wafer placing platform in the cavity of the first base through a conductive adhesive and is electrically connected with the chip to be radiated to form an oscillation loop, and the orthographic projection of the quartz oscillator in the first base is not overlapped with the orthographic projection of the chip to be radiated in the first base; and the first base is mounted on the second base through a conductive adhesive.

The application discloses an electro-catalytic oxidation crystal primitive electrode plate and relates to the technical field of electro-catalytic oxidation. The electro-catalytic oxidation crystal primitive electrode plate comprises a glass steel shell, electrode seats are arranged at the upper end and the lower end of the glass steel shell, a plurality of crystal primitive plates and a plurality of electrode plates are arranged in a cylindrical mounting cavity, and the crystal primitive plates and the electrode plates are alternately distributed from top to bottom. In the cylindrical mounting cavity in the glass steel shell, the crystal primitive plates and the electrode plates are alternately distributed and are provided with a plurality of through holes, and gaps are left between the crystal primitive plates and the electrode plates. The application further discloses a firing process. When the glass steel shell is injected with an aqueous solution, the water flows through the through holes and then passes through each gap in stages. The unique design greatly increases the contact area of the aqueous solution with the electrode plates and the crystal primitive plates, optimizes the water flow path, effectively improves the mass transfer efficiency, enables pollutants to more quickly and fully contact the electrode surface and the crystal primitive plates, and further accelerates the oxidation-reduction reaction, thereby significantly improving the removal efficiency of the pollutants.

The invention discloses a preparation method of a crystalline-amorphous heterojunction photocatalyst, relates to the technical field of preparation of photocatalysts, and aims to solve the technical problems of difficulty in crystalline phase control, infirmness in interface bonding and the like in the prior art. According to the invention, corresponding amorphous iron oxide introduction mechanisms are adopted for zirconium oxide with different crystal phases, so that a monoclinic phase zirconium oxide / amorphous iron oxide heterojunction, a tetragonal phase zirconium oxide / amorphous iron oxide heterojunction and a cubic phase zirconium oxide / amorphous iron oxide heterojunction are prepared; the introduction mechanism comprises a modification mechanism, a competition mechanism and an auxiliary mechanism; controllable construction of a heterostructure of crystalline zirconium oxide and amorphous ferric oxide is realized by finely regulating and controlling an amorphous structure of ferric oxide and an interface bonding mode of different crystalline zirconium oxide.

The application discloses a processing method of a compound semiconductor wafer, which comprises the following steps: attaching the compound semiconductor wafer to a carrier film, fixing the carrier film in a fixing ring, and packaging the edge of the carrier film through the fixing ring to form a bearing assembly; and performing a cutting process, a film expanding process, an etching process and a carrier film retraction process in the form of the bearing assembly. In the continuous process, the wafer is maintained in the form of a bearing assembly, the distance between the crystal grains is expanded after pre-expanding, so that the side wall of the cutting path can be etched clean, the yield rate meets the standard, then the carrier film is retracted to the initial state and is suitable for subsequent process steps, the bearing structure of the wafer does not need to be replaced, the process is simplified, the production cost is reduced, and the production efficiency is improved.

The invention discloses a general synthesis method of a sub-nano transition metal nitride nanowire. The general synthesis method comprises the following steps: (1) preparing a W18O49 one-dimensional mesocrystal; (2) ion exchange preparation of a metal oxide precursor: dispersing the W18O49 one-dimensional mesocrystal in a metal ion ethanol solution, and stirring for ion exchange reaction to obtain a one-dimensional nanowire precursor; and (3) molten salt assisted nitridation reaction: uniformly mixing the W18O49 one-dimensional mesocrystal or the metal oxide one-dimensional nanowire with NaI or KCl or a mixed salt of NaI and KCl, heating and cooling in an NH3 / N2 mixed atmosphere, washing a product, and carrying out vacuum drying to obtain the TMN nanowire. The invention further provides application of the sub-nano transition metal nitride nanowire, the problems of high-temperature limitation and structure control of traditional TMN synthesis are solved, and an SERS platform without background interference is provided for trace detection.

This invention provides a crystal growth apparatus and method, solving technical problems such as low wafer utilization, slow crystal growth speed, low efficiency, and poor uniformity in existing chip manufacturing processes. This invention abandons the traditional cylindrical ampoule structure and innovatively adopts a ring-shaped ampoule design, allowing the crystal to grow into a hollow cylindrical shape highly adapted to the target wafer specifications. The heater is placed inside the ampoule, replacing the traditional external heating method. During crystal growth, a central adjustment mechanism with insulating material concentrates heat on the crystal, reducing heat loss. The heater is surrounded by insulating material, effectively suppressing heat radiation leakage. Simultaneously, the structure supporting the ampoule is adjusted, making the entire device simple, low-cost, and lightweight.

In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

The application provides a method for improving the white spot defect of a crystalline silicon wafer in a post-oxidation process, which comprises the following steps: (1) wafer loading; (2) first ozone purification; (3) temperature rising; (4) first vacuum pumping; (5) second ozone purification; (6) post-oxidation; (7) second vacuum pumping; (8) pressure recovery; (9) temperature falling; and (10) wafer unloading. The method utilizes ozone with strong oxidizing property to purify the air in a furnace tube, improves the cleanliness of the environment atmosphere in the post-oxidation process, reduces the proportion of pollutants in the furnace tube, and further effectively reduces the proportion of the white spot defect of the crystalline silicon wafer. The method is simple in operation, low in requirement for equipment, low in processing cost, and has a large-scale application prospect.

This utility model relates to the field of die bonding equipment technology, providing a crystal ring storage device and a die bonding machine. The crystal ring storage device includes a main support and a support assembly. The support assembly is used to place the crystal rings. Each support assembly includes a first support portion and a second support portion, which are spaced apart from each other along a second direction to form a clearance space for the crystal ring picking mechanism. The first direction and the second direction are arranged at an angle. When the crystal ring picking mechanism picks up the crystal ring from the support assembly, the working end of the crystal ring picking mechanism can extend under the crystal ring, and then pass through the clearance space along the first direction to lift the crystal ring a certain distance, so that the crystal ring is separated from both the first and second support portions. Then the crystal ring is taken out from the support assembly, thereby avoiding the phenomenon of dust generation caused by friction between the crystal ring and the support assembly during the crystal ring picking process, and improving the working environment of the die bonding equipment.

This application discloses a crystal rise rate control method and related apparatus. It acquires target shoulder morphology data and growth state data at the current control moment. For multiple candidate crystal rise rate compensation amounts, it predicts the predicted diameter data for each candidate compensation amount at the future control moment, and then determines the corresponding predicted shoulder morphology data based on the predicted diameter data. This allows for the advance determination of the impact of different candidate crystal rise rate compensation amounts on the subsequent outer contour morphology of the crystal shoulder. Based on the difference between the predicted shoulder morphology data and the target shoulder morphology data, a target crystal rise rate compensation amount is determined from the multiple candidate compensation amounts. The crystal rise rate during the shoulder formation process is then adjusted according to the target compensation amount, enabling the adjustment to be made in advance in conjunction with changes in the subsequent outer contour morphology of the crystal shoulder, thereby improving the timeliness of crystal rise rate adjustment during the Czochralski single-crystal silicon shoulder formation process.

The utility model relates to the technical field of clamping and positioning devices, and discloses a crystal oscillator clamping and positioning device. The crystal oscillator clamping and positioning device comprises a clamping groove, a correction piece and a linear driving mechanism, the bottom side face and the first side wall of the clamping groove are used for supporting and positioning the bottom and the first side face of a crystal oscillator, and the adjacent face and the opposite face of the crystal oscillator are positioned in combination with a positioning groove in the front end of the correction piece; and accurate clamping and positioning of three surfaces of the crystal oscillator are realized. The correction piece is driven by the linear driving mechanism to move in the direction forming the included angle S with the first side wall, it is ensured that the positioning groove is attached to the two side faces of the crystal oscillator firstly, after the first side face of the crystal oscillator is attached to the first side wall to be in close fit, the correction piece stops moving, clamping and positioning are completed, and the problem of positioning deviation caused by abrasion of a traditional positioning device is solved.

The invention discloses a method for regulating and controlling crystal phase defects in a direct regeneration process of a waste ternary material, and belongs to the technical field of waste battery recovery. The method comprises the following steps: placing a waste ternary material with lattice defects in an oxidizing atmosphere for impurity removal and calcination to obtain a decarbonized and defluorinated waste ternary material; and ball-milling and mixing the decarbonized and defluorinated waste ternary material, a lithium source and a fluorine-free carbon source, and carrying out two-stage pyrogenic process calcination in an oxygen-containing atmosphere to obtain the regenerated ternary material. According to the method, direct regeneration of the waste ternary material is achieved through a solid-phase sintering method under the condition that no miscellaneous elements are introduced, and the regenerated ternary material is excellent in electrochemical performance and can be compared favorably with a commercial ternary positive electrode material.

The invention discloses an electrode material for electrocatalytic reduction of nitrate, the electrode material takes a porous titanium plate as a carrier, in-situ synthesized titanium dioxide mesocrystals are distributed in micropores of the porous titanium plate, the carrier contains 20-30% by volume of oxygen vacancies, and the carrier loads bimetallic monoatoms. Wherein the mass percentage content of bimetallic single atoms in the electrode material is 0.2-5%; and the bimetals comprise two of Cu, Co, Fe, Ni and Sn. According to the electrode material disclosed by the invention, mesocrystal titanium dioxide is adopted as a carrier, so that the electrode material has excellent structural stability, * NO adsorption energy is remarkably optimized, a desorption energy barrier is reduced, and the selectivity of generating N2 through electro-catalysis of nitrate is improved.

This invention provides a method for manufacturing zirconium refractory materials by melting and casting, belonging to the technical field of melt-cast refractory materials. The refractory materials of this invention are sprues and slide plates, containing ZrO2, HfO2, CaO, MgO, Y2O3, Fe2O3, TiO2, Al2O3, and SiO2. This invention directly casts molten zirconium oxide at high temperatures into a high-temperature mold to produce zirconium sprues and slide plates. This simplifies the production process of zirconium sprues and slide plates and eliminates the high-temperature sintering energy consumption associated with pressing and sintering processes. The prepared zirconium sprues and slide plates have high bulk density, and the manufactured products exhibit uniform distribution of crystal phases and internal micropores, resulting in a significant improvement in hot compressive strength, thermal shock resistance, and erosion resistance.

The present application relates to a kind of iron boron doped titanium dioxide mesocrystal and its fiber membrane and application. Iron boron doped titanium dioxide mesocrystal is synthesized by one-step calcination method, and then the dispersion liquid containing the mesocrystal and polyvinylidene fluoride is made into fiber membrane by electrospinning method. The structure of the nanoscale mesocrystal is unique, containing mesoporous, high proportion of titanium dioxide {001} high-energy crystal surface and heteroatom doping defects. The mesocrystal has abundant reactive sites, large specific surface area and enhanced light absorption, significantly improving the photocatalytic activity of titanium dioxide. The present application further combines heterogeneous Fenton-like photocatalytic technology with membrane separation technology, and the prepared fiber membrane can efficiently and quickly degrade organic pollutants. The membrane flux is high, the operation is convenient, the catalyst loss problem is solved, the recycling stability of the membrane is good, the cost is low, and it has broad application prospect.

The present invention relates to a method of controlling the arrangement of building block nanocrystals in iron oxide mesocrystals by controlling the type of surface ligand, the method including mixing an iron ion precursor and a surface ligand. The present invention can provide nanoparticles having different magnetic properties by controlling the crystallographic arrangement of building block nanocrystals in mesocrystals according to surface ligands.

The invention discloses an automatic crystal oscillator feeding device and a sorting method, and belongs to the technical field of crystal oscillator production.The automatic crystal oscillator feeding device comprises a vibration feeding mechanism, a box body is arranged on one side of the vibration feeding mechanism, a horizontal conveying assembly is arranged on the box body, the horizontal conveying assembly comprises a straight vibration channel and a material returning channel, and a sorting assembly is arranged at the upper end of the box body; the sorting assembly comprises an inclined conveying plate, a sorting disc is arranged in the middle of the upper surface of the box body, and a detection assembly is arranged at the upper end of the box body and comprises a detection device and an adsorption part. According to the automatic crystal oscillator feeding device and the sorting method, through front and back recognition of the horizontal conveying assembly and circulating feeding of the material returning channel, two-dimensional paving of the sorting disc and multi-dimensional detection, adsorption and rejection of the detection assembly are combined, full-automatic feeding, precise detection and graded material receiving of crystal oscillators are achieved, and the sorting efficiency is improved. The technical problems that in the prior art, crystal oscillators are prone to stacking during feeding, the detection efficiency is low, and automatic classification and collection cannot be achieved are solved.

This invention discloses a method for preparing crystalline-amorphous heterojunction photocatalysts, belonging to the field of photocatalyst preparation technology, and aims to solve technical problems such as difficulty in controlling the crystalline phase and weak interfacial bonding in existing technologies. This invention employs corresponding amorphous iron oxide introduction mechanisms for zirconium oxide with different crystalline phases to prepare monoclinic zirconium oxide / amorphous iron oxide heterojunctions, tetragonal zirconium oxide / amorphous iron oxide heterojunctions, and cubic zirconium oxide / amorphous iron oxide heterojunctions. The introduction mechanisms include modification mechanisms, competition mechanisms, and auxiliary mechanisms. By finely controlling the amorphous structure of iron oxide and its interfacial bonding with different crystalline zirconium oxides, the controllable construction of crystalline zirconium oxide and amorphous iron oxide heterostructures is achieved.

A self-powered electrocatalytic alcohol solution capsule and a preparation method and application thereof, the alcohol solution capsule comprising a shell, an encapsulation layer arranged in the shell, and an electrochemical unit coated with the encapsulation layer, the electrochemical unit comprising a catalytic electrode, a counter electrode, and an electrolyte layer between the catalytic electrode and the counter electrode, the catalytic electrode comprising a gold foil and a manganese-tannic acid mesocrystal, wherein the manganese-tannic acid mesocrystal is a mesoscopic crystal structure formed by self-assembly of a metal-polyphenol network of a tannic acid and a manganese salt under weak acid conditions on the gold foil. The alcohol solution capsule of the present application adopts a self-generating primary cell structure assembled by edible catalytic electrodes, counter electrodes, electrolyte layers, encapsulation layers, and shells, can efficiently oxidize ethanol in situ in the intestinal tract through electrochemistry, and convert the ethanol into acetic acid, so as to achieve active removal before the ethanol is absorbed into the blood in a large amount, and achieve the purposes of reducing the blood alcohol concentration, reducing alcohol-related organ damage, and improving neurobehavioral impairment.

The invention provides a high-precision cluster type quartz crystal oscillator performance detection device based on temperature compensation, which is applied to the technical field of crystal oscillator preparation. The high-precision cluster type quartz crystal oscillator performance detection device comprises a temperature simulation mechanism, a crystal oscillator detection mechanism and a crystal oscillator tool, the temperature simulation mechanism comprises a temperature control lower plate, a temperature control upper plate, a thermoelectric refrigerating unit, a medium inlet pipe and a medium outlet pipe. The temperature control upper plate and the temperature control lower plate are attached to each other to jointly form a heat exchange cavity. The crystal oscillator detection mechanism comprises a mounting plate. An insulated constant-temperature heat exchange medium is introduced into the cavity for accommodating the probe through the liquid guide port, and the probe is heated or cooled by using the medium, so that the temperature of the probe is consistent with the temperature of a crystal oscillator product in a current vehicle gauge level test environment, heat exchange during contact is avoided, the temperature stability of the crystal oscillator product in the frequency detection process is ensured, and the detection efficiency is improved. Therefore, the accuracy of detection data is improved, the temperature feedback adjustment is more accurate, and the overall precision of the vehicle gauge level high and low temperature resistance test of the crystal oscillator product is further improved.

The application discloses a polyvinylidene fluoride piezoelectric film with superfine beta crystals and a preparation method thereof. Polyvinylidene fluoride particles are crushed into polyvinylidene fluoride powder; the dried polyvinylidene fluoride powder is kept warm on a forming plate higher than the melting point of the polyvinylidene fluoride powder to obtain a PVDF melt, then the temperature is kept unchanged, and the PVDF melt is processed through multiple reciprocating cycle rolling by a roller under a pressure of 8-15 KPa; the processed product is cooled to form a polyvinylidene fluoride film with a thickness of 10-20 microns; the polyvinylidene fluoride film is processed through multiple reciprocating cycle secondary rolling by a roller under a pressure of 8-15 KPa to complete the reconstruction of beta crystals in the polyvinylidene fluoride piezoelectric film. The application can realize size control and greatly improve the beta crystal content at the same time, and can stably generate high piezoelectric output, and has wide application potential in the fields of stress sensing and environmental energy capture.

The utility model relates to a refrigerant shunting and leading-out device of a melt crystallization pipe. The problem that in the prior art, cold and hot media at the bottom of a crystal tube are difficult to lead out completely and rapidly is solved. The device comprises an annular liquid receiving disc arranged at the bottom of a crystallization pipe in a crystallizer shell, a plurality of receding channels allowing the crystallization pipe to penetrate through are formed in the annular liquid receiving disc, an upper flow guide structure tightly attached to the circumferential outer wall of the crystallization pipe is inserted into the upper side of each receding channel, and a lower flow guide structure is inserted into the lower side of each receding channel. An overflow liquid receiving mechanism is arranged on the lower side of the annular liquid receiving disc. The device has the advantages that cold and hot media which flow to the bottom of the crystallization pipe after being coated with a film can be quickly guided out to the outside, the cold and hot media are prevented from being accumulated in the circumferential direction of the bottom of the crystallization pipe, the overflow phenomenon of the cold and hot media can be avoided, the use effect is good, and the cold and heat exchange efficiency of the crystallization pipe is improved.