45 results about "Mesocrystal" patented technology

The invention discloses a wafer laser processing method and system. In the grooving equipment, after a wafer is coated with laser cutting protection glue, an ultraviolet laser is matched with a machining platform, a metal layer on the front face of the wafer is cut and grooved, and the grooved wafer is cleaned and put back to be clamped; in the hidden cutting equipment, a wafer is inversely buckled on a working platform deck, an infrared laser is matched with the working platform deck, infrared light penetrates through a through cutting film to carry out hidden cutting on the wafer, and cracks are formed in the wafer on the path through which laser passes; in the film expanding machine, the through cutting film expands to decompose the wafer into crystal grains along cracks in the wafer. According to the invention, front slotting, back hidden cutting and film expanding processes are matched to complete cutting and separation of the wafer at one time, so that the production efficiency and the cutting quality are greatly improved. Through cooperation of the working platform deck and the ultrasonic cleaning device, the front face of the wafer is protected, and the front face of the wafer is prevented from being damaged during implicit cutting.

The invention provides a crystal growth device and a crystal growth method, and solves the technical problems of low wafer utilization rate, low crystal growth speed, low efficiency, poor uniformity and the like in the existing chip manufacturing process. According to the invention, a traditional cylindrical ampoule structure is abandoned, and the annular ampoule design is innovatively adopted, so that the crystal grows into an inner hollow cylinder shape which is highly matched with the specification of a target wafer; the heater is arranged on the inner side of the ampoule, a traditional outer side heating mode is replaced, and heat is intensively acted on crystals in cooperation with an adjusting center of a heat preservation material during crystal growth, so that heat loss is reduced; the periphery of the heater is made of heat insulation materials, heat radiation leakage is effectively restrained, meanwhile, the ampoule supporting structure is adjusted, and the whole device is simple, low in cost and light in weight.

The invention discloses a blade coating device for solving edge accumulation of spin-coated photoresist. The blade coating device comprises a pair of supporting parts, an adjusting part connected with the pair of supporting parts, and a scraper connected with a Z-direction adjusting part in the adjusting part. Through the combined action of the shape and the size of the scraper and the adjusting device, the residual photoresist generated at the edge of the wafer in the spin-coating process is effectively removed. The device is easy to integrate, simple in structure and convenient to operate, by being integrated with a traditional spin coater, the advantages of the spin coater can be maintained, it is guaranteed that photoresist in the area, needing to be patterned, of a wafer is uniform and flat, the problem of edge residual photoresist caused in the spin coating process can be effectively solved, and therefore the precision of the photoetching technology and the product quality are improved.

The invention provides a crystal phase impurity analysis method, and belongs to the technical field of analytical chemistry. The method comprises the following steps: acquiring an X-ray diffraction pattern of a sodium zirconium cyclosilicate sample to be detected; according to the standard curve or standard equation of the crystal phase impurities and the X-ray diffraction pattern of the sodium zirconium cyclosilicate sample to be detected, the content of the crystal phase impurities in the sodium zirconium cyclosilicate sample to be detected is obtained; the standard curve is obtained by fitting the ratio of the mass of the crystal phase impurities to the mass of the sodium zirconium cyclosilicate in a standard curve sample and the ratio of the diffraction intensity of characteristic diffraction peaks of the crystal phase impurities to the diffraction intensity of characteristic diffraction peaks of the sodium zirconium cyclosilicate in an X-ray diffraction pattern of the standard curve sample; the standard equation is a linear equation corresponding to the standard curve; the standard curve sample is a mixture of a blank sodium zirconium silicate sample and a crystal phase impurity reference substance. By adopting the method disclosed by the invention, the content of the crystal phase impurities such as CPA and CPB in the sodium zirconium cyclosilicate can be simply, conveniently, quickly and accurately detected.

A method for growing single crystals, in particular silicon carbide single crystals, uses a device including a crucible, the crucible defining an outer surface and delimiting a receptacle having an axial extent between a bottom portion and an opening portion. The receptacle is designed for crystal growth and at least one seed crystal layer is located in the opening portion, the seed crystal layer being weighed down by a weighting mass at a side remote from the receptacle and being fixed, in particular exclusively, by the weight force of the weighting mass in its position against at least one holding portion located in the opening portion.

The invention discloses a wafer positioning device and method in back cleaning, and relates to the technical field of semiconductor chip packaging in IC manufacturing. The MEMS light receiving chip is attached to the substrate, and an MEMS light receiving chip light sensing area is arranged in the middle area of the upper surface of the MEMS light receiving chip; the MEMS light emitting chip is arranged above the MEMS light receiving chip in parallel, an MEMS light emitting chip light sensing area is arranged in the middle area of the lower surface of the MEMS light emitting chip, and the MEMS light emitting chip light sensing area and the MEMS light receiving chip light sensing area are arranged in a face-to-face mounting mode; and the at least two copper columns are arranged between the MEMS light receiving chip and the MEMS light emitting chip. Redundant structure materials and a multi-layer pressing process are replaced and omitted through copper column connection between the MEMS light receiving chip and the MEMS light emitting chip, and meanwhile the product size is reduced.

The embodiment of the invention discloses a crystal oscillator, device and method for a single particle test. In a specific implementation mode, the crystal oscillator comprises a to-be-radiated chip, a differential chip, a quartz oscillator, a first base and a second base, the to-be-radiated chip is bonded in the cavity of the first base through a conductive adhesive, and the first base exposes the to-be-radiated chip; the differential chip is electrically connected with each port in the cavity of the first base through gold wire bonding; the quartz oscillator is bonded on a wafer placing platform in the cavity of the first base through a conductive adhesive and is electrically connected with the chip to be radiated to form an oscillation loop, and the orthographic projection of the quartz oscillator in the first base is not overlapped with the orthographic projection of the chip to be radiated in the first base; and the first base is mounted on the second base through a conductive adhesive.

One lt; 100 gt; the preparation method of the crystal orientation high-purity germanium single crystal comprises the following steps: S1, crystal pulling: S11, loading a germanium ingot raw material into a crucible, 1t; 111gt, 111gt; the method comprises the following steps: S11, fixing a crystal orientation seed crystal on a seed crystal chuck, S12, blowing a pulling furnace, S13, melting a germanium ingot raw material to form a melt, S14, sequentially performing seeding, necking, necking, shouldering, diameter equalizing and diameter equalizing until a small amount of melt is left in a crucible, S15, re-melting the crystal to a seeding end of the seed crystal, S16, repeating the sub-steps S14 and S17, ending until the melt is completely pulled, S18, cooling, opening the pulling furnace, and cutting off the crystal; s2, performing a cutting test perpendicular to the axial direction of the crystal, and screening out a part of which the carrier concentration at two ends is less than 2E10cm <-3 > and the dislocation density meets 6000-10000 / cm < 2 > as a first qualified section; s3, as lt; 111gt, 111gt; the crystal orientation is used as the standard, 54.74 degrees are used as the steering included angle, and the 1t is cut from the first qualified section; 100 gt; a second qualified section of crystal orientation; and S4, rechecking the head and the tail of the second qualified section.

The invention provides a method for removing aluminum trichloride from crude vanadium oxychloride, which comprises the following steps: (1) taking crude vanadium oxychloride containing aluminum trichloride impurities as a raw material, injecting the raw material into a crystallizer, quickly cooling and growing crystal to form an aluminum trichloride crystal nucleus, and then carrying out gradient cooling and crystal growth; and (2) pumping out crystal slurry from the crystallizer, and filtering to obtain separated and purified vanadium oxychloride. The method has the beneficial effects that the problems of high cost, high difficulty, long period and high vanadium loss of the existing method for removing aluminum from crude vanadium oxychloride are well solved; the method has the advantages of simple separation process flow, no use of any solvent in the crystallization process, cost saving, high product quality and easiness in industrialization.

The invention discloses a wafer edge area determination method and device, equipment, a medium and a product, and relates to the technical field of semiconductor integrated circuits. The wafer edge area determination method comprises the steps of obtaining a wafer design image of a target product and at least one actual wafer image of the target product, wherein the wafer design image is used for representing an arrangement mode of crystal grain units of a wafer corresponding to the target product in a manufacturing process; according to a wafer abnormal position in the actual wafer image, a target boundary, close to the wafer center side, of a wafer edge area in the wafer design image is determined, and the wafer abnormal position is any one of a defect contour point position and an abnormal crystal grain unit position of a wafer defect area; and determining an area between the target boundary and the wafer edge of the wafer design image as a wafer edge area of the wafer design image.

The invention belongs to the technical field of yttrium oxide preparation, and particularly discloses application of yttrium salt suspension containing dodecylbenzene sulfonic acid, yttrium oxide mesocrystal as well as a preparation method and application of the yttrium oxide mesocrystal, and the preparation method comprises the following steps: S1, carrying out hydrothermal reaction on the yttrium salt suspension containing dodecylbenzene sulfonic acid to generate yttrium oxide precursor mesocrystal; and S2, treating the yttrium oxide precursor mesocrystal to obtain the yttrium oxide mesocrystal. Dodecylbenzene sulfonic acid is adopted as a surfactant to be matched with deionized water to prepare the yttrium oxide mesocrystal, the morphology of the yttrium oxide mesocrystal is snowflake-shaped or triangular prism-shaped, the granularity of the yttrium oxide mesocrystal is 0.4-2 microns, and compared with a yttrium oxide material prepared without dodecylbenzene sulfonic acid as the surfactant, the yttrium oxide mesocrystal has the pore diameter of 11.68 nm, the high specific surface area of 31.59 m < 2 > / g and multiple adsorption sites, so that the yttrium oxide mesocrystal has the advantages that the specific surface area of the yttrium oxide mesocrystal is larger than that of the yttrium oxide material prepared without dodecylbenzene sulfonic acid as the surfactant; when the relative pressure (p / p0) is 1, the adsorption performance of the yttrium oxide mesocrystal is high and reaches 59.998 cm < 3 >. G <-1 >.

The application discloses an electro-catalytic oxidation crystal primitive electrode plate and relates to the technical field of electro-catalytic oxidation. The electro-catalytic oxidation crystal primitive electrode plate comprises a glass steel shell, electrode seats are arranged at the upper end and the lower end of the glass steel shell, a plurality of crystal primitive plates and a plurality of electrode plates are arranged in a cylindrical mounting cavity, and the crystal primitive plates and the electrode plates are alternately distributed from top to bottom. In the cylindrical mounting cavity in the glass steel shell, the crystal primitive plates and the electrode plates are alternately distributed and are provided with a plurality of through holes, and gaps are left between the crystal primitive plates and the electrode plates. The application further discloses a firing process. When the glass steel shell is injected with an aqueous solution, the water flows through the through holes and then passes through each gap in stages. The unique design greatly increases the contact area of the aqueous solution with the electrode plates and the crystal primitive plates, optimizes the water flow path, effectively improves the mass transfer efficiency, enables pollutants to more quickly and fully contact the electrode surface and the crystal primitive plates, and further accelerates the oxidation-reduction reaction, thereby significantly improving the removal efficiency of the pollutants.

The invention discloses a preparation method of a crystalline-amorphous heterojunction photocatalyst, relates to the technical field of preparation of photocatalysts, and aims to solve the technical problems of difficulty in crystalline phase control, infirmness in interface bonding and the like in the prior art. According to the invention, corresponding amorphous iron oxide introduction mechanisms are adopted for zirconium oxide with different crystal phases, so that a monoclinic phase zirconium oxide / amorphous iron oxide heterojunction, a tetragonal phase zirconium oxide / amorphous iron oxide heterojunction and a cubic phase zirconium oxide / amorphous iron oxide heterojunction are prepared; the introduction mechanism comprises a modification mechanism, a competition mechanism and an auxiliary mechanism; controllable construction of a heterostructure of crystalline zirconium oxide and amorphous ferric oxide is realized by finely regulating and controlling an amorphous structure of ferric oxide and an interface bonding mode of different crystalline zirconium oxide.

The application discloses a processing method of a compound semiconductor wafer, which comprises the following steps: attaching the compound semiconductor wafer to a carrier film, fixing the carrier film in a fixing ring, and packaging the edge of the carrier film through the fixing ring to form a bearing assembly; and performing a cutting process, a film expanding process, an etching process and a carrier film retraction process in the form of the bearing assembly. In the continuous process, the wafer is maintained in the form of a bearing assembly, the distance between the crystal grains is expanded after pre-expanding, so that the side wall of the cutting path can be etched clean, the yield rate meets the standard, then the carrier film is retracted to the initial state and is suitable for subsequent process steps, the bearing structure of the wafer does not need to be replaced, the process is simplified, the production cost is reduced, and the production efficiency is improved.

The invention relates to the technical field of clock calibration, in particular to an ultrasonic water meter crystal oscillator clock calibration method based on the Internet of Things and an ultrasonic water meter. The method comprises the following steps: acquiring current network time, current local time and starting time of a current calibration period, and determining a first calibration coefficient of a 32.768 kHz crystal oscillator clock based on the current network time, the current local time and the starting time; obtaining the calibration period number of the 32.768 kHz crystal oscillator clock, and determining the standard time length and the actual test time length for calibrating the 4MHz crystal oscillator clock based on the calibration period number; determining a second calibration coefficient of the 4MHz crystal oscillator clock based on the standard duration and the actual test duration; in the actual flow measurement process, the flight time of the ultrasonic water meter is corrected based on the first calibration coefficient and the second calibration coefficient. The accuracy of the crystal oscillator clock in the ultrasonic water meter can be improved.

The invention discloses a general synthesis method of a sub-nano transition metal nitride nanowire. The general synthesis method comprises the following steps: (1) preparing a W18O49 one-dimensional mesocrystal; (2) ion exchange preparation of a metal oxide precursor: dispersing the W18O49 one-dimensional mesocrystal in a metal ion ethanol solution, and stirring for ion exchange reaction to obtain a one-dimensional nanowire precursor; and (3) molten salt assisted nitridation reaction: uniformly mixing the W18O49 one-dimensional mesocrystal or the metal oxide one-dimensional nanowire with NaI or KCl or a mixed salt of NaI and KCl, heating and cooling in an NH3 / N2 mixed atmosphere, washing a product, and carrying out vacuum drying to obtain the TMN nanowire. The invention further provides application of the sub-nano transition metal nitride nanowire, the problems of high-temperature limitation and structure control of traditional TMN synthesis are solved, and an SERS platform without background interference is provided for trace detection.

This invention provides a crystal growth apparatus and method, solving technical problems such as low wafer utilization, slow crystal growth speed, low efficiency, and poor uniformity in existing chip manufacturing processes. This invention abandons the traditional cylindrical ampoule structure and innovatively adopts a ring-shaped ampoule design, allowing the crystal to grow into a hollow cylindrical shape highly adapted to the target wafer specifications. The heater is placed inside the ampoule, replacing the traditional external heating method. During crystal growth, a central adjustment mechanism with insulating material concentrates heat on the crystal, reducing heat loss. The heater is surrounded by insulating material, effectively suppressing heat radiation leakage. Simultaneously, the structure supporting the ampoule is adjusted, making the entire device simple, low-cost, and lightweight.

In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

The application provides a method for improving the white spot defect of a crystalline silicon wafer in a post-oxidation process, which comprises the following steps: (1) wafer loading; (2) first ozone purification; (3) temperature rising; (4) first vacuum pumping; (5) second ozone purification; (6) post-oxidation; (7) second vacuum pumping; (8) pressure recovery; (9) temperature falling; and (10) wafer unloading. The method utilizes ozone with strong oxidizing property to purify the air in a furnace tube, improves the cleanliness of the environment atmosphere in the post-oxidation process, reduces the proportion of pollutants in the furnace tube, and further effectively reduces the proportion of the white spot defect of the crystalline silicon wafer. The method is simple in operation, low in requirement for equipment, low in processing cost, and has a large-scale application prospect.

This utility model relates to the field of die bonding equipment technology, providing a crystal ring storage device and a die bonding machine. The crystal ring storage device includes a main support and a support assembly. The support assembly is used to place the crystal rings. Each support assembly includes a first support portion and a second support portion, which are spaced apart from each other along a second direction to form a clearance space for the crystal ring picking mechanism. The first direction and the second direction are arranged at an angle. When the crystal ring picking mechanism picks up the crystal ring from the support assembly, the working end of the crystal ring picking mechanism can extend under the crystal ring, and then pass through the clearance space along the first direction to lift the crystal ring a certain distance, so that the crystal ring is separated from both the first and second support portions. Then the crystal ring is taken out from the support assembly, thereby avoiding the phenomenon of dust generation caused by friction between the crystal ring and the support assembly during the crystal ring picking process, and improving the working environment of the die bonding equipment.

This application discloses a crystal rise rate control method and related apparatus. It acquires target shoulder morphology data and growth state data at the current control moment. For multiple candidate crystal rise rate compensation amounts, it predicts the predicted diameter data for each candidate compensation amount at the future control moment, and then determines the corresponding predicted shoulder morphology data based on the predicted diameter data. This allows for the advance determination of the impact of different candidate crystal rise rate compensation amounts on the subsequent outer contour morphology of the crystal shoulder. Based on the difference between the predicted shoulder morphology data and the target shoulder morphology data, a target crystal rise rate compensation amount is determined from the multiple candidate compensation amounts. The crystal rise rate during the shoulder formation process is then adjusted according to the target compensation amount, enabling the adjustment to be made in advance in conjunction with changes in the subsequent outer contour morphology of the crystal shoulder, thereby improving the timeliness of crystal rise rate adjustment during the Czochralski single-crystal silicon shoulder formation process.

The invention discloses a composite nucleating agent as well as a preparation method and application thereof, and relates to the technical field of composite materials. The inorganic compound with the particle size of 20-150 [mu] m is compounded with the nucleating agent components such as norbornene dodecanamide acid zinc salt and N, N '-dicyclohexyl terephthalamide, so that the interaction between the nucleating agent components and polypropylene chain segments in a PPR (polypropylene random copolymer) matrix is improved, the beta crystal nucleation efficiency in the PPR matrix is further improved, and the nucleating effect of beta crystals in the PPR matrix is improved. The mechanical property of PPR is greatly improved, so that the content of beta crystals in the PPR material is as high as 70% or above, the tensile strength is as high as 51.1 MPa or above, the elongation at break is as high as 515.3% or above, and the normal-temperature impact strength is not lower than 39.2 KJ / m < 2 >.

The utility model relates to the technical field of clamping and positioning devices, and discloses a crystal oscillator clamping and positioning device. The crystal oscillator clamping and positioning device comprises a clamping groove, a correction piece and a linear driving mechanism, the bottom side face and the first side wall of the clamping groove are used for supporting and positioning the bottom and the first side face of a crystal oscillator, and the adjacent face and the opposite face of the crystal oscillator are positioned in combination with a positioning groove in the front end of the correction piece; and accurate clamping and positioning of three surfaces of the crystal oscillator are realized. The correction piece is driven by the linear driving mechanism to move in the direction forming the included angle S with the first side wall, it is ensured that the positioning groove is attached to the two side faces of the crystal oscillator firstly, after the first side face of the crystal oscillator is attached to the first side wall to be in close fit, the correction piece stops moving, clamping and positioning are completed, and the problem of positioning deviation caused by abrasion of a traditional positioning device is solved.

The invention discloses a method for regulating and controlling crystal phase defects in a direct regeneration process of a waste ternary material, and belongs to the technical field of waste battery recovery. The method comprises the following steps: placing a waste ternary material with lattice defects in an oxidizing atmosphere for impurity removal and calcination to obtain a decarbonized and defluorinated waste ternary material; and ball-milling and mixing the decarbonized and defluorinated waste ternary material, a lithium source and a fluorine-free carbon source, and carrying out two-stage pyrogenic process calcination in an oxygen-containing atmosphere to obtain the regenerated ternary material. According to the method, direct regeneration of the waste ternary material is achieved through a solid-phase sintering method under the condition that no miscellaneous elements are introduced, and the regenerated ternary material is excellent in electrochemical performance and can be compared favorably with a commercial ternary positive electrode material.

The invention discloses an electrode material for electrocatalytic reduction of nitrate, the electrode material takes a porous titanium plate as a carrier, in-situ synthesized titanium dioxide mesocrystals are distributed in micropores of the porous titanium plate, the carrier contains 20-30% by volume of oxygen vacancies, and the carrier loads bimetallic monoatoms. Wherein the mass percentage content of bimetallic single atoms in the electrode material is 0.2-5%; and the bimetals comprise two of Cu, Co, Fe, Ni and Sn. According to the electrode material disclosed by the invention, mesocrystal titanium dioxide is adopted as a carrier, so that the electrode material has excellent structural stability, * NO adsorption energy is remarkably optimized, a desorption energy barrier is reduced, and the selectivity of generating N2 through electro-catalysis of nitrate is improved.

The invention discloses a method for improving a bonding layer residue problem, which comprises the following steps of: providing a substrate on which a silicon nitride layer and an enhanced plasma oxide layer are sequentially formed from bottom to top; through photoetching and etching processes, a through hole zero layer is formed on the edge of the enhanced plasma oxide layer, and the through hole zero layer penetrates through part of the silicon nitride layer; depositing a bonding layer, wherein the bonding layer covers the enhanced plasma oxide layer and the exposed silicon nitride layer; a metal layer is formed on the bonding layer in a crystal edge removing and film forming mode; removing the bonding layer which is not covered by the metal layer on the edge by adopting a wet etching process; and performing a chemical mechanical polishing process until the thickness of the residual enhanced plasma oxide layer reaches the target thickness. By means of the scheme, the problem that in the related technology, the bonding layer on the edge portion of the wafer falls off in the chemical mechanical polishing engineering, and the wafer performance is affected can be solved.

Methods of producing an alloy is provided. The methods involve can liquid-liquid interfaces reactions between gallium (Ga) or a liquid metal alloy and metal precursors. The resulting high entropy states are kinetically trapped by isothermal solidification. The methods can produce alloys with increased composition diversity (e.g., above about 20 elements), different morphology (e.g., 0-dimension, 2-dimension, 3-dimension), and crystallinity variations (e.g., single crystal, polycrystalline, mesocrystal, amorphous) under mild conditions (e.g., about room temperature to 80° C.). Alloys produced by the methods, high entropy mesocrystal alloys, and Ga-free high entropy alloys are also provided.

This invention provides a method for manufacturing zirconium refractory materials by melting and casting, belonging to the technical field of melt-cast refractory materials. The refractory materials of this invention are sprues and slide plates, containing ZrO2, HfO2, CaO, MgO, Y2O3, Fe2O3, TiO2, Al2O3, and SiO2. This invention directly casts molten zirconium oxide at high temperatures into a high-temperature mold to produce zirconium sprues and slide plates. This simplifies the production process of zirconium sprues and slide plates and eliminates the high-temperature sintering energy consumption associated with pressing and sintering processes. The prepared zirconium sprues and slide plates have high bulk density, and the manufactured products exhibit uniform distribution of crystal phases and internal micropores, resulting in a significant improvement in hot compressive strength, thermal shock resistance, and erosion resistance.

The invention discloses a method for forming MPB in a thin film material, an MIM structure and a preparation method and application of the MIM structure, and relates to the technical field of thin film material manufacturing. According to the method, an electrode patterning mode with good compatibility is utilized, so that a local stress field is introduced into a film interface during subsequent annealing heat treatment, the randomness of spontaneous growth of a conventional crystal phase in a stress uniform field is broken, and the distribution of the crystal phase tends to be controllable from disorder; on the premise of not changing the intrinsic composition of the material, the spatial transformation and ordered arrangement of the polycrystal phase in a submicron-to-nanoscale specific region are realized, MPB is successfully induced to be formed in the thin film material, and the performance of the thin film material is improved. The problems that in an existing thin film material, the crystal phase structure is difficult to accurately regulate and control, the performance is unstable, and the process compatibility is poor are solved.

The invention relates to the technical field of etching devices, and discloses a wafer edge damaged layer etching device, comprising: a casing and a workbench, wherein the casing is provided with a workbench in the middle, the workbench is provided with an etching groove on the top, a turntable is provided in the center of the etching groove, a positioning groove is provided on the top of the turntable, a guide rod is provided inside the positioning groove, a wafer placement plate is provided on the top of the guide rod, and an adsorption component is provided on the wafer placement plate. In the invention, positive pressure air is conveyed through an air pipe and a branch pipe to inflate an elastic airbag with positive pressure, and under the guidance of the guide rod, the wafer placement plate rises to separate the wafer from the etching liquid, and during the entire process of separating the wafer from the etching liquid, the wafer is placed stably to avoid damaging the microstructure of the wafer surface, and at the same time avoid pollution or damage caused by improper operation of personnel.