Drive circuit and car

A technology for driving circuits and circuits, applied in circuits or fluid pipelines, electrical pulse generator circuits, electrical components, etc., can solve problems such as transistor bursting, transistor wrong turn-on, and straight-through short-circuit of upper and lower bridge arms, to ensure reliability. Effect

Inactive Publication Date: 2017-10-20
BEIJING ELECTRIC VEHICLE
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  • Claims
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Problems solved by technology

However, when the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, Metal-Oxide-Semiconductor Field-Effect Transistor) in the driving circuit is turned off, the driving level (0V) is easily disturbed by the switching of the transistor, causing a voltage of 2-3V Spike, if it reaches the conduction threshold Vth voltage of the metal-oxide se...

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  • Drive circuit and car

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Embodiment Construction

[0030] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments. In the following description, specific details, such as specific configurations and components, are provided only to assist in a comprehensive understanding of the embodiments of the present invention. Accordingly, those of ordinary skill in the art should recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the invention. Also, descriptions of well-known functions and constructions are omitted for clarity and conciseness.

[0031] It should be understood that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic related to the embodiment is included in at least one embodiment of t...

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Abstract

The invention provides a drive circuit and a car. The drive circuit comprises a drive signal source; a first metal-oxide-semiconductor field-effect transistor, wherein the drive signal source is connected with the source and gate of the first metal-oxide-semiconductor field-effect transistor to form a closed circuit, and the drain of the first metal-oxide-semiconductor field-effect transistor is connected with a preset voltage end; and a voltage stabilizing circuit connected with the closed circuit in series, wherein when the first metal-oxide-semiconductor field-effect transistor is in a switch-off state, the voltage stabilizing circuit enables a voltage between the source and gate of the first metal-oxide-semiconductor field-effect transistor to be smaller than a preset value. According to the embodiment of the invention, under the interference condition, the voltage of the first metal-oxide-semiconductor field-effect transistor is not enabled to reach a switch-on threshold through utilization of the voltage stabilizing circuit.

Description

technical field [0001] The invention relates to the technical field of circuit design, in particular to a driving circuit and an automobile. Background technique [0002] In the driving circuit, when using the pulse width modulation (PWM, Pulse Width Modulation) driving method, it is often turned off at a low level of 0V and turned on at a high level of +18V. However, when the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, Metal-Oxide-Semiconductor Field-Effect Transistor) in the driving circuit is turned off, the driving level (0V) is easily disturbed by the switching of the transistor, causing a voltage of 2-3V Spike, if it reaches the conduction threshold Vth voltage of the metal-oxide semiconductor field effect transistor, it will cause the metal-oxide semiconductor field effect transistor that should be in the off state to be turned on by mistake, causing a direct short circuit between the upper and lower bridge arms, which may lead to charging The machine ...

Claims

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Application Information

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IPC IPC(8): H03K3/013H03K3/021B60R16/02
CPCB60R16/02H03K3/013H03K3/021
Inventor 李志猛庄启超阎交生肖胜然鲁卫申王云钊陈泓泽
Owner BEIJING ELECTRIC VEHICLE
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