Drive circuit and car

Abstract

The invention provides a drive circuit and a car. The drive circuit comprises a drive signal source; a first metal-oxide-semiconductor field-effect transistor, wherein the drive signal source is connected with the source and gate of the first metal-oxide-semiconductor field-effect transistor to form a closed circuit, and the drain of the first metal-oxide-semiconductor field-effect transistor is connected with a preset voltage end; and a voltage stabilizing circuit connected with the closed circuit in series, wherein when the first metal-oxide-semiconductor field-effect transistor is in a switch-off state, the voltage stabilizing circuit enables a voltage between the source and gate of the first metal-oxide-semiconductor field-effect transistor to be smaller than a preset value. According to the embodiment of the invention, under the interference condition, the voltage of the first metal-oxide-semiconductor field-effect transistor is not enabled to reach a switch-on threshold through utilization of the voltage stabilizing circuit.

Description

technical field [0001] The invention relates to the technical field of circuit design, in particular to a driving circuit and an automobile. Background technique [0002] In the driving circuit, when using the pulse width modulation (PWM, Pulse Width Modulation) driving method, it is often turned off at a low level of 0V and turned on at a high level of +18V. However, when the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, Metal-Oxide-Semiconductor Field-Effect Transistor) in the driving circuit is turned off, the driving level (0V) is easily disturbed by the switching of the transistor, causing a voltage of 2-3V Spike, if it reaches the conduction threshold Vth voltage of the metal-oxide semiconductor field effect transistor, it will cause the metal-oxide semiconductor field effect transistor that should be in the off state to be turned on by mistake, causing a direct short circuit between the upper and lower bridge arms, which may lead to charging The machine ...

AI Technical Summary

Problems solved by technology

However, when the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, Metal-Oxide-Semiconductor Field-Effect Transistor) in the driving circuit is turned off, the driving level (0V) is easily disturbed by the switching of the transistor, causing a voltage of 2-3V Spike, if it reaches the conduction threshold Vth voltage of the metal-oxide semiconductor field effect transistor, it will cause the metal-oxide semiconductor field effect transistor that should be in the off state to be turned on by mistake, causing a direct short circuit between the upper and lower bridge arms, which may lead to charging The machine works abnormally or the metal-oxide semiconductor field effect transistor bursts

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