Numerical simulation method for silicon carbide ceramic ordinary pressure solid phase sintering process

Abstract

The invention provides a numerical simulation method for a silicon carbide ceramic ordinary pressure solid phase sintering process. The method comprises the following steps of (1) building a thermal viscoelasticity constitutive model of the silicon carbide ceramic ordinary pressure solid phase sintering process; (2) building a finite element analysis model; (3) defining a sintering creep constitutive equation; (4) performing transient thermal structural coupling nonlinear simulation analysis to obtain temperature field distribution and a densified contraction amount on a silicon carbide ceramic product; and (5) through comparison with test data measured by a real-time observation furnace, verifying the correctness of the thermal viscoelasticity constitutive model and the finite element analysis model. According to the method, the technical problems that deformation and temperature distribution states on the ceramic product cannot be measured in real time in an existing silicon carbide ceramic ordinary pressure solid phase sintering process and targeted sintering process parameters and process measures cannot be accurately set and formulated for silicon carbide ceramic products in different size and structure forms are solved.

Description

technical field [0001] The invention relates to the technical field of sintering preparation of ceramic materials, in particular to a numerical simulation method for a normal-pressure solid-phase sintering process of silicon carbide ceramics. Background technique [0002] Sintering is an extremely important process link in the ceramic preparation process. The quality of the sintering process directly affects the quality and final performance of ceramic products. During the densification process of silicon carbide ceramic products under normal pressure solid-phase sintering, the large shrinkage rate of parts is the main reason affecting the quality of ceramic products. Although a large number of experimental studies have been carried out on the atmospheric pressure solid-phase sintering of silicon carbide ceramics, since the sintering process is a very complicated process, it is impossible to detect parameters such as temperature distribution and deformation state on the prod...

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Problems solved by technology

[0003] In view of the above, the present invention solves the problem that the deformation and temperature distribution on ceramic products cannot be measured in real time during the normal-pressure solid-phase sintering process of silicon carbide ceramics, and that silicon carbide ceramic products of different sizes and structural forms cannot be accurately formulated. In order to solve the technical problems of permanent sintering process parameters and process measures, a numerical simulation method for the normal pressure solid phase sintering process of silicon carbide ceramics is provided.

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