Ultraviolet detector array structure based on interdigital electrodes

Abstract

The invention discloses an ultraviolet detector array structure based on interdigital electrodes, and relates to the technical field of photoelectronics. The detector array structure comprises a base, leads and interdigital electrode elements. The leads include row leads and column leads. All the column leads are equidistantly arranged on the surface of the base. All the row leads are equidistantly arranged in a way of being perpendicular to the column leads. The intersection parts of the row leads and the column leads are insulated. The interdigital electrode elements are arranged in the segmented space of the row leads and the column leads. The two ends of the interdigital electrode elements are respectively connected on the row leads and the column leads. The array of any size can be realized, the process controllability is high, the cost is low, the operation steps are simple, large-area preparation is feasible, the repeatability is great, the development period is short and the work state of the unit of any position can be controlled by using the subsequent circuit processing state so as to have wide application prospect.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an ultraviolet detector array structure based on interdigital electrodes. Background technique [0002] Ultraviolet detection technology has high concealment performance because it does not actively radiate electromagnetic waves, and is not easily disturbed by electromagnetic waves with longer wavelengths because it works in the optical band. It can work normally in a strong electromagnetic radiation environment and has become a modern battlefield in the 21st century. Urgently needed high-tech detection and early warning technology. Ultraviolet detection is playing an increasingly important role in military fields, scientific research, industrial and agricultural production, and daily life. [0003] With the rapid development of microelectronics technology, ultraviolet detection devices have developed from the first-generation photomultiplier tube and the second-generati...

AI Technical Summary

Problems solved by technology

The general array structure requires electrodes to be plated on the upper surface and the lower surface of the film, so the area on the back of the substrate opposite to the pixel needs to be made into a very thin micro-bridge structure, and some isolation trenches need to be dug and filled with insulating materials. Moreover, some integrated signal processing circuits will also be prepared on the substrate, which will damage the substrate itself

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