Ultraviolet detector array structure based on interdigital electrodes

A technology of ultraviolet detectors and interdigitated electrodes, which is applied in the field of optoelectronics, can solve problems such as substrate damage, and achieve the effects of low power consumption, fast response speed, and uniform film growth

Inactive Publication Date: 2017-11-17
BEIJING UNIV OF POSTS & TELECOMM
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

The general array structure requires electrodes to be plated on the upper surface and the lower surface of the film, so the area on the back of the substrate opposite to the pixel needs to be made into a very thin micro-bridg

Method used

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  • Ultraviolet detector array structure based on interdigital electrodes
  • Ultraviolet detector array structure based on interdigital electrodes
  • Ultraviolet detector array structure based on interdigital electrodes

Examples

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Embodiment 1

[0039] Taking a 4×4 detector array as an example, a standard semiconductor photolithography process is used, such as figure 1 As shown, if a high level is applied to a certain column conductor and a low level is applied to a certain row conductor, the interdigitated electrode element at the intersection of the row conductor and the column conductor will be in the working state due to the applied bias.

[0040] The cross-section of the structure along the row of wires is as follows figure 2 As shown, it includes a base layer, a lower electrode layer, an insulating layer and an upper electrode layer.

[0041] Firstly, realize the array of column wires and interdigitated electrodes, and the upper electrode mask such as image 3 As shown, the distance between the centers of two adjacent interdigitated electrodes is 1000 μm, the finger width is 10 μm, and they are arranged at an angle of 45 degrees to the column conductors. The column conductors are 5000 μm long and 50 μm wide, e...

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Abstract

The invention discloses an ultraviolet detector array structure based on interdigital electrodes, and relates to the technical field of photoelectronics. The detector array structure comprises a base, leads and interdigital electrode elements. The leads include row leads and column leads. All the column leads are equidistantly arranged on the surface of the base. All the row leads are equidistantly arranged in a way of being perpendicular to the column leads. The intersection parts of the row leads and the column leads are insulated. The interdigital electrode elements are arranged in the segmented space of the row leads and the column leads. The two ends of the interdigital electrode elements are respectively connected on the row leads and the column leads. The array of any size can be realized, the process controllability is high, the cost is low, the operation steps are simple, large-area preparation is feasible, the repeatability is great, the development period is short and the work state of the unit of any position can be controlled by using the subsequent circuit processing state so as to have wide application prospect.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an ultraviolet detector array structure based on interdigital electrodes. Background technique [0002] Ultraviolet detection technology has high concealment performance because it does not actively radiate electromagnetic waves, and is not easily disturbed by electromagnetic waves with longer wavelengths because it works in the optical band. It can work normally in a strong electromagnetic radiation environment and has become a modern battlefield in the 21st century. Urgently needed high-tech detection and early warning technology. Ultraviolet detection is playing an increasingly important role in military fields, scientific research, industrial and agricultural production, and daily life. [0003] With the rapid development of microelectronics technology, ultraviolet detection devices have developed from the first-generation photomultiplier tube and the second-generati...

Claims

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Application Information

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IPC IPC(8): H01L27/144H01L31/02H01L31/0224H01L31/18
CPCH01L27/1446H01L31/02002H01L31/0224H01L31/18Y02P70/50
Inventor 唐为华彭阳科
Owner BEIJING UNIV OF POSTS & TELECOMM
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