Thin film transistor and electro optical device thereof
A technology of thin film transistors and electrodes, which is applied in the field of thin film transistors and their optoelectronic devices, and can solve the problems of poor service life and impact of components
Active Publication Date: 2017-11-21
AU OPTRONICS CORP
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However, although this method can improve the overall flexibility, it will cause other problems, for example, the life of the components will be adversely affected
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[0054] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.
[0055] In the drawings, the thickness of each element and the like is exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on," "connected to," or "overlapping" another element, it can be directly on the other element. on or connected to another element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As us...
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The present disclosure provides a thin film transistor. The thin film transistor includes a gate, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source, and a drain. The gate is disposed on the substrate. The semiconductor layer is disposed on the substrate, and the semiconductor layer overlaps the gate. The gate dielectric layer is disposed between the gate and the semiconductor layer. The first dielectric layer is disposed on the substrate, the first dielectric layer covers two sides of the gate or the semiconductor layer, the dielectric constant of the first dielectric layer is smaller than the dielectric constant of the gate dielectric layer, and the first dielectric constant is less than 4. The source and the drain are disposed on the substrate, and the source and the drain are separated from each other and respectively contact with the semiconductor layer. The thin film transistor provided by the present disclosure can be applied to a flexible optoelectronic device and can maintain electrical properties without increasing the number of masks in the process and without significantly increasing the cost.
Description
technical field [0001] The invention relates to the field of optoelectronics, especially a thin film transistor and its optoelectronic device. Background technique [0002] With the development of 3C products, for the sake of aesthetic appearance, curved surfaces, foldable, and retractable methods are the current challenges in industrial design. These design methods must allow the electronic components arranged therein to comply with the flexible nature. [0003] Compared with inorganic materials, organic materials have better flexibility. Therefore, it is a common practice to arrange organic materials in electronic components instead of inorganic materials. However, although the overall flexibility can be improved by such an approach, other problems will arise, for example, the lifetime of the components will be adversely affected. Contents of the invention [0004] An embodiment of the present disclosure relates to a thin film transistor. The thin film transistor incl...
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IPC IPC(8): H01L29/786H01L27/14H01L27/15H01L27/32
CPCH01L27/14H01L27/15H01L29/78606H01L29/42384H01L29/4908H01L29/7869H01L27/1443H10K59/1213H01L27/1262H01L27/1288H01L27/1248H01L27/1218G02F1/1368Y02E10/50H10K59/12
Inventor 孙硕阳梁育馨黄婉真郑君丞
Owner AU OPTRONICS CORP