Ion emission method for increasing ion implantation beam and method

Abstract

The invention discloses an ion emission method for increasing ion implantation beam. The device comprises an ion source, a first drain, a storage magnetic field and a magnetic analysis component, wherein the first drain is arranged in an outlet direction of the ion source; the storage magnetic field and an outlet of the first drain deflect a certain angle, the angle makes ions passing through the first drain enter the storage magnetic field to carry out circular motion, and the magnetic analysis component is used for detecting and separating the ions in the storage magnetic field; the ions ionized by the ion source are extracted through the first drain; the ions extracted by the first drain enter the storage magnetic field to carry out circular motion; and when the number of the ions in the storage magnetic field reaches a specified value, the ions in the storage magnetic field are released into the magnetic analysis component. According to the ion emission method for increasing the ion implantation beam, which is provided by the invention, the ion implantation beam can be increased, so that the uniformity and the efficiency of an ion implantation process are improved.

Description

Technical field [0001] The present invention relates to the technical field of ion implantation, in particular to an ion emission device and method for increasing ion implantation beam current. Background technique [0002] The ion implanter is a key equipment in the manufacturing process of integrated circuits. Ion implantation is to ionize the elements to be implanted, separate and accelerate the positive ions to form a high-energy ion current with tens of thousands of electron volts, which bombards the surface of the workpiece, and the ions are due to kinetic energy. It is very large, when it is driven into the surface layer, its charge is neutralized and becomes replacement atoms or interstitial atoms between crystal lattices, which are left in the surface layer, causing changes in the chemical composition, structure, and properties of the material. Compared with the conventional thermal doping process, ion implantation can accurately control the implantation dose, implantati...

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Problems solved by technology

However, the number of plasma ionized by the ion source is limited each time, and more ions are required for each scan in the wide-beam scan. If more ions cannot be implanted at one time, the amount of ions will be less during the ion implantation process. Implantation of non-uniform defects on the wafer to be processed

Therefore, in the wide-beam scanning process using existing devices, the number of ions in the ion implantation beam is too small to become a serious defect in the ion implantation process

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